Contact resistance of thin metal film contacts

Norberg, Gunnar; Dejanovic, Slavko; Hesselbom, Hjalmar

doi:10.1109/tcapt.2006.875891

Cited by 44 publications

(33 citation statements)

References 11 publications

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“…These formulas are valid only when the contacting bodies can be considered as semi-infinite compared to the area of contact. Norberg et al [18] have used numerical method to approximate the contact resistance of a thin film constituting at least one of the contacting bodies. However, we used a partially idealized model which excludes the surface roughness and the results show some uncertainties due to numerical errors.…”

Section: A Contact Resistance Versus Compressionmentioning

confidence: 99%

Evaluation of Anisotropic Conductive Films Based on Vertical Fibers for Post-CMOS Wafer-Level Packaging

Diop¹,

Radji

Hamoui

et al. 2013

IEEE Trans. Compon., Packag. Manufact. Technol.

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Abstract-In this paper, we investigate the mechanical and electrical properties of an anisotropic conductive film (ACF) on the basis of high-density vertical fibers for a wafer-level packaging (WLP) application. As part of the WaferBoard, a reconfigurable circuit platform for rapid system prototyping, ACF is used as an intermediate film providing compliant and vertical electrical connection between chip contacts and a top surface of an active wafer-size large-area IC. The chosen ACF is first tested by an indentation technique. The results show that the elastic-plastic deformation mode as well as the Young's modulus and the hardness depend on the indentation depth. Second, the efficiency of the electrical contact is tested using a uniaxial compression on a stack comprising a dummy ball grid array (BGA) board, an ACF, and a thin Al film. For three bump diameters, as the compression increases, the resistance values decrease before reaching low and stable values. Despite the BGA solder bumps exhibit plastic deformation after compression, no damage is found on the ACF film. These results show that vertical fiber ACFs can be used for nonpermanent bonding in a WLP application.

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Section: A Contact Resistance Versus Compressionmentioning

confidence: 99%

Evaluation of Anisotropic Conductive Films Based on Vertical Fibers for Post-CMOS Wafer-Level Packaging

Diop¹,

Radji

Hamoui

et al. 2013

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…It should be noted that Z aw /Z vw and Z as , Z gs /Z vs represent the impedances between the dashed surfaces [ Fig. 1(b)], which do not include the constriction resistances in the near field of the contacts [8]. In this paper, this error is corrected by adding Z a , Z g1−3 , and Z v to characterize the current constriction effects for the aggressor, guard ring, and victim, respectively.…”

Section: Proposed Guard Ring Modelmentioning

confidence: 99%

“…1(b)]. The P-well layer introduces significant current constriction effects at near fields close to the contacts [8]. Such effects cannot be effectively characterized by existing guard ring models.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Design Guidelines for ${\rm P}^{+}$ Guard Rings in Lightly Doped CMOS Substrates

Shen

Mikkelsen²,

Zhang³

et al. 2013

IEEE Trans. Electron Devices

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This paper presents a compact model for P + guard rings in lightly doped CMOS substrates featuring a P-well layer. Simple expressions for the impedances in the model are derived based on a conformal mapping approach. The model can be used to predict the noise suppression performance of P + guard rings in terms of S-parameters, which is useful for substrate noise mitigation in mixed-signal system-on-chips. Validation of the model has been done by both electromagnetic simulation and experimental results from guard rings implemented using a standard 0.18-µm CMOS process. In addition, design guidelines have been drawn for minimizing the guard ring size while maintaining the noise suppression performance.Index Terms-Compact model, guard ring, mixed-signal IC, P-well, P + contact, substrate noise.

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“…For this reason finite element (FE) modeling has become an efficient approach to determine geometrical correction factors for arbitrary measurement configurations. [20][21][22][23] We have adapted this approach to determine the GCFs for the measurement geometry depicted in Figure 1(c) for a range of experimentally relevant sample dimensions and probe spacings. From the result, a simple analytical fit function is derived that allows for the calculation of GCFs(D, s, t) for an arbitrary configuration in a typical geometry range.…”

Section: Introductionmentioning

confidence: 99%

Electrical conductivity measurements on disk-shaped samples

Boor

Zabrocki

Frohring³

et al. 2014

Review of Scientific Instruments

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We have developed a sample holder design that allows for electrical conductivity measurements on a disk-shaped sample. The sample holder design is based on and compatible with popular measurement systems that are currently restricted to bar-shaped samples. The geometrical correction factors which account for the adjusted measurement configuration were calculated using finite element modeling for a broad range of sample and measurement geometries. We also show that the modeling results can be approximated by a simple analytical fit function with excellent accuracy. The proposed sample holder design is compatible with a concurrent measurement of the Seebeck coefficient. The chosen sample geometry is furthermore compatible with a thermal conductivity measurement using a laser flash apparatus. A complete thermoelectric characterization without cutting the sample is thus possible.

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Contact resistance of thin metal film contacts

Cited by 44 publications

References 11 publications

Evaluation of Anisotropic Conductive Films Based on Vertical Fibers for Post-CMOS Wafer-Level Packaging

Evaluation of Anisotropic Conductive Films Based on Vertical Fibers for Post-CMOS Wafer-Level Packaging

Modeling and Design Guidelines for ${\rm P}^{+}$ Guard Rings in Lightly Doped CMOS Substrates

Electrical conductivity measurements on disk-shaped samples

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