Contactless Spectroscopy of Deep Levels in Semiconducting Materials: Gaas

Давыдов, И. А.; Ivanov, O.; Svircov, D.; Georgiev, G.; Odrinsky, A. P.; Пустовойт, В. И.

doi:10.1080/00387019408003237

Cited by 4 publications

(2 citation statements)

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“…The SPCE and the photo-current (PC) induced by excitation with short light pulses with high intensity and wavelength in the spectral range of the semiconductor's intrinsic absorption were studied for GaAs [Davydov et al, 1994]. No direct electric contact to the sample is necessary for the registration of the deep level (DL) spectrum, provided that a double pulse integrator (lock-in, double-boxcar) and a computer convolution of the SPCE transients are applied.…”

Section: Contactless Characterization Of Semiconductorsmentioning

confidence: 99%

Applications and Experiences of Quality Control

Ivanov¹

2011

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Ognyan Ivanov graduated from the Physics Department of the Sofia University "St. Kliment Ohridski". He received his PhD degree from the Georgi Nadjakov Institute of Solid State Physics (ISSP), Bulgarian Academy of Sciences in Sofia, Bulgaria, where he is currently employed. His research activity is in the area of electromagnetic interactions with solids and is concentrated on the creation of various methods for control of materials and processes, mainly in the field of quality control. The methods can be used for the control of solids, liquids and gases. Dr Ivanov is an author and co-author of 54 publications in scientific journals and books, including four invited papers, and he has participated in 26 international conferences. He has worked as a member or leader in 14 projects of ISSP with organizations outside of the Academy. Prof. Ivanov also teaches physics at the University of Architecture, Civil Engineering and Geodesy in Sofia. He is a member of national and international scientific organizations, editorial boards and has also received awards at exhibitions for inventors and innovations.

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Section: Contactless Characterization Of Semiconductorsmentioning

confidence: 99%

Applications and Experiences of Quality Control

Ivanov¹

2011

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“…In the SPCE-based method, the energy and the relative density of the trap levels can be estimated from the derivative of the SPCE voltage dependence on the energy of the incident photons. The SPCE and the photo-current (PC) induced by excitation with short light pulses with high intensity and wavelength in the spectral range of the semiconductor's intrinsic absorption were studied for GaAs [Davydov et al, 1994]. No direct electric contact to the sample is necessary for the registration of the deep level (DL) spectrum, provided that a double pulse integrator (lock-in, double-boxcar) and a computer convolution of the SPCE transients are applied.…”

Section: Contactless Characterization Of Semiconductorsmentioning

confidence: 99%