“…At the end of the growing process, the Si substrates covered by ZnO NWs were washed with DI water, dried under hot airflow (~30 s at ~53 • C), and post-annealed in an oven at 350 • C for 30 min in ambient atmosphere to improve the ZnO crystallinity. Scanning electron microscope images (SEM, Zeiss FE-SEM NEON 40, Iéna, Germany) demonstrated that well organized and homogeneous ZnO NWs grown onto Si (1.55 cm 2 ) were obtained, with a measured height of 1.10 ± 0.05 µm and a measured mean diameter of 85 ± 5 nm in concentration conditions (C1) and a measured height of 1.80 ± 0.1 µm and a measured mean diameter of 51 ± 5 nm in concentration conditions (C2) [24,25]. Previous characterization works also proved the good crystallinity of the as-obtained ZnO NWs by ultraviolet-visible spectrophotometry (Maya2000 Pro from Ocean Optics, Dunedin, FL, USA), with a mean measured gap value around 3.21 ± 0.03 eV, and by X-ray diffraction (XRD, CuKα, λ = 1.5418 Å, Rigaku Smartlab, Neu-Isenburg, Germany), with ZnO Wurtzite peaks obtention [22][23][24][25].…”