Continuous-Wave Electrically Pumped 1.55-$\mu$m Edge-Emitting Platelet Ridge Laser Diodes on Silicon

Rumpler, J.; Fonstad, Clifton G.

doi:10.1109/lpt.2009.2019261

Cited by 8 publications

(4 citation statements)

References 20 publications

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“…Although some strategies to obtain efficient light emission from Si or compatible materials have been devised, they are only partly successful. This has resulted in insufficient light generation for practical applications or limited operation times. , Heterogeneous integration using the metallic bonding method has demonstrated successful transfer of prefabricated III–V lasers to Si substrates; however, precise alignment, which is essential for devices with high sensitivity and tunability, remains challenging. , Furthermore, direct bonding of the III–V epitaxial structure to Si waveguides formed on silicon-on-insulator (SOI) has demonstrated the integration of multiple devices in a single bonding step. , This approach, however, requires the bonding of large areas of material , and the planarized nanoscale oxide layer between the III–V material and SOI waveguide, resulting in a wafer-size mismatch and considerably inefficient use of III–V material.…”

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confidence: 99%

On-Chip Transferrable Microdisk Lasers

et al. 2020

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Si photonics has been receiving substantial attention as an integration platform in photonics and optoelectronic research, owing to the ability to manufacture low-cost, compact integrated circuits. However, realizing efficient and high-quality light sources remains a major challenge. Herein, we report an on-chip transferrable low-threshold single microdisk laser, which is fabricated by the microtransfer printing using a structured polymer. The optically transparent and adhesive microtip enables readily reproducible, damage-free, and precisely aligned targeted transfer of a single microdisk in the growth substrate onto a prefabricated Si-post on a silicon-on-insulator wafer. Spectroscopic measurements revealed that the microdisk laser with a small Si-post exhibits rich lasing actions with an estimated threshold of ∼96.8 μW. A controlled experiment revealed that laser devices with varied Si-post sizes exhibit no significant changes in optical properties until the size of the Si-post becomes comparable with that of the microdisk. These observations agreed with the results of systematic three-dimensional numerical simulations. We believe that our microtransfer printing technique can be used to transfer micro- and nanostructures onto targeted locations and realize complex microscale heterogeneous architectures in a compact integrated circuit.

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On-Chip Transferrable Microdisk Lasers

et al. 2020

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“…Exploiting the modular nature of the recess integration technique, the integration reported here involved the bonding and alignment of platelet laser diodes fabricated by a previous PhD candidate [4] in recesses on Si substrate wafers with dielectric waveguides fabricated by yet another PhD candidate [5].…”

Section: Fabrication Of Photonic Componentsmentioning

confidence: 99%

“…The process developed to do this uses a commercial InGaAsP/InP MQW laser diode heterostructure layer stack [6] customized by the addition of an etch-stop layer next to the substrate to facilitate removal of the InP substrate. Processes were developed to pattern backside contacts on the laser diodes after the substrate has been removed and to micro-cleave high quality facets on the platelet diode lasers [4], [7].…”

Section: A Fabrication Of Micro Cleaved Laser Diodesmentioning

confidence: 99%

Integration of Edge-Emitting Laser Diodes With Dielectric Waveguides on Silicon

Famenini¹,

Fonstad²

2012

IEEE Photon. Technol. Lett.

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Edge-emitting 1.55-µm platelet InGaAs/InP laser diodes are bonded in 6.5-µm-deep recesses etched into a thick SiO 2 layer on an Si substrate so that they are aligned and coaxially coupled to SiON dielectric waveguides fabricated within the SiO 2 layer. The integrated lasers show room temperature pulsed and continuous wave (CW) lasing at threshold currents of 17 and 19 mA, respectively. The CW output power measured from the end of the dielectric waveguide at the edge of the chip is more than 1 mW, and laser-to-waveguide coupling losses under 2 dB are observed. CW spectral measurements show single-mode emission in the vicinity of 150 µm. The integrated structure is highly planar with a footprint of only 150 µm × 300 µm, and the integration process is modular and can be used to integrate a variety of devices on the same substrate. Index Terms-Complementary metal-oxide-semiconductor (CMOS) compatible photonics, infrared laser diodes, integrated optoelectronics, photonic integrated circuits (PIC), photonics integration.

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“…For long-wavelength components, especially for 1.3-and 1.5-µm lasers, InP-based materials have become very important materials for the optoelectronic industry. 8,9) It is of great interest to combine these structures with existing silicon technology. The use of InP-based lasers and detectors on Si substrates is particularly advantageous since Si is transparent at their emission wavelength, allowing for optical communication through bulk Si material.…”

Section: Introductionmentioning

confidence: 99%

Thermal treatment for preventing void formation on directly-bonded InP/Si interface

Matsumoto

Kobie

Shimomura

2014

Jpn. J. Appl. Phys.

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The surface conditions of thin film InP epitaxial layers transferred to a Si substrate have been investigated in terms of void size, density, and area occupied by the voids, by changing the annealing temperature and ramping periods to reach the annealing temperature of 400 °C. Through a long ramp annealing time of 45 h, the voids generated were downsized by up to two orders of magnitude, and the total number of voids also greatly decreased compared that for the typical annealing process at 400 °C. This resulted in a reduction of the InP surface area occupied by voids from 3.96 to 0.03%. Then, successful fabrication of void-free 50 mm InP/Si substrates without forming any outgassing channels has been demonstrated.

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Continuous-Wave Electrically Pumped 1.55-$\mu$m Edge-Emitting Platelet Ridge Laser Diodes on Silicon

Abstract: Continuous-wave electrically pumped 1.55-mu m edge-emitting platelet ridge laser diodes on silicon The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.

Cited by 8 publications

References 20 publications

On-Chip Transferrable Microdisk Lasers

On-Chip Transferrable Microdisk Lasers

Integration of Edge-Emitting Laser Diodes With Dielectric Waveguides on Silicon

Thermal treatment for preventing void formation on directly-bonded InP/Si interface

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