Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate

Abstract

A InGaN/GaN quantum dot green ( = 524 nm ) laser Appl. Phys. Lett. 98, 221104 (2011); 10.1063/1.3596436 Room temperature continuous-wave operation of In As In P ( 100 ) quantum dot lasers grown by gas-source molecular-beam epitaxy Appl. Phys. Lett. 93, 111109 (2008); 10.1063/1.2985900 Continuous-wave operation of 1.5 m In Ga As In Ga As P In P quantum dot lasers at room temperature Appl. Phys. Lett. 87, 083110 (2005); 10.1063/1.2034108 Room-temperature continuous-wave operation of GaInNAs GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

“…Through the measurement of the laser linewidth enhancement factor, a, we show that the InGaN disks in the nanowires behave as quantum dots electrically, which may explain the low threshold current density and high temperature stability of these devices, which are comparable with self-assembled quantum dot lasers. [19][20][21][22] Through modulation experiments, we derive a differential gain of 3.1 Â 10 À17 cm 2 and measure a maximum modulation bandwidth of 3.1 GHz and chirp less than 1 Å .…”

Improved Quantum Efficiency in Semipolar $(1\bar{1}01)$ InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth

“…Extensive works had been reported in the literature on the use of novel nonpolar InGaN-based QW structures to suppress the charge separation and improve IQE by reducing internal field in the active region. Several methods for achieving nonpolar InGaN QWs had been reported by growing on GaN bulk substrate [8], a-plane {1120} GaN [9], and m-plane {1100} GaN [10]. However, the difficulty in the growth of these nonpolar films lies in the planar anisotropic nature of the growing surface because of the anisotropic in-plane strain and the adatom diffusion length.…”

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

“…A waveguide (cavity) loss of 9.3 dB/cm is derived from the measured data, which is comparable to that measured in InGaN/GaN quantum dot lasers with planar waveguide and cladding layers. 23,24 This loss primarily results from the low mode confinement factor and contributes to an increase in the threshold current.…”