Contrast Enhancement Materials. Effects Of Process Variables On Critical Dimension Control With Altilith Cem-420.

Williams, Robert E.; Weaver, Stanton; Balch, E. W.; Sardella, John C.

doi:10.1117/12.963637

Cited by 2 publications

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“…The latest multilayer imaging technique, called contrast enhanced photolithography, improves resolution (5) and can improve linewidth control (6) but requires additional coating and stripping steps. Furthermore, contrast enhancement materials (CEM) requires two to three times more exposure dose than conventional positive resist (7). Commercially available dyed resists are attractive to the device fabricator because they significantly reduce reflective notching and improve linewidth control (8) while requiring no additional processing steps.…”

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confidence: 99%

Contrast Enhancing Additives for Positive Photoresist

Pampalone¹,

Kuyan²

1988

J. Electrochem. Soc.

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Adding catalytic amounts of acidic organic compounds, such as phenols and carboxylic acids, to positive photoresists induced the formation of surface skin, leading to increased photoresist wall angles and higher resolution. When the additives were dyes and added at levels which absorbed significantly, at the actinic wavelengths, linewidth variability over topology was reduced without a reduction in the wall angles of the patterned features. For example, dyed resist matched to the g‐line stepper gave less than 0.1 μm linewidth variability over reflective tantalum disilicide islands compared to 0.24 μm (1) for undyed resist. The wall angles for both resists were 85°, and the dyed resist required an exposure dose only two times greater. A partial mechanism was suggested for the formation of the surface skin during softbake.

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confidence: 99%