Contribution of dislocations to 1/f noise in mercury cadmium telluride infrared photovoltaic detectors

Realization of very long wavelength infrared photovoltaic detector arrays on mercury cadmium telluride epitaxial layers grown on Si substrates

“…Low leakage currents, especially the reduced conduction of current through the dislocations, should additionally result in the improvement of 1/f noise performance of the array. 24 The superiority of n-on-p structure is the result of basic differences in dislocation characteristics in terms of higher dislocation core charges and lower electron and hole capture probabilities at dislocation sites in the p-type base material.…”

Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

“…The origin of ohmic-like behavior in MCT diodes is not well recognized. Many authors indicate that dislocations in bulk HgCdTe are the main source of leakage current [9,10,11]. Their conclusion relies on a significant correlation found between dislocation density and the magnitude of the leakage current (as well as 1/f noise).…”

Surface leakage current contribution to the dynamic resistance and 1/f noise in mid-wave mercury cadmium telluride infrared photodiodes

“…It may be emphasized here that numerical value of the multiplying Coefficient a in the 1/f noise equation is not a universal constant. It may vary, since a is related [17] to the fluctuations in the shunt resistance. The latter are related to the fluctuations in surface potential on account of trapping and detrapping fluctuations of charges at the passivant-HgCdTe interface in the present case.…”