2011
DOI: 10.1021/nn102723w
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Control of Current Saturation and Threshold Voltage Shift in Indium Oxide Nanowire Transistors with Femtosecond Laser Annealing

Abstract: Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors in a way that is compatible with low temperature substrates, have not been achieved. Here we show that femtosecond laser pulses can anneal individual transi… Show more

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Cited by 33 publications
(19 citation statements)
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“…Controlling the threshold voltages of NWs is of practical importance to any integrated circuits. Laser annealing has been employed successfully to shift the threshold voltages of NW FETs to make them operate in both depletion and enhancement modes …”
Section: Laser Irradiation Of Metal Oxides and Their Applicationsmentioning
confidence: 99%
See 3 more Smart Citations
“…Controlling the threshold voltages of NWs is of practical importance to any integrated circuits. Laser annealing has been employed successfully to shift the threshold voltages of NW FETs to make them operate in both depletion and enhancement modes …”
Section: Laser Irradiation Of Metal Oxides and Their Applicationsmentioning
confidence: 99%
“…h) Threshold‐voltage ( V th ) shift of the NW transistor, before and after laser annealing, at V ds = 0.1, 0.5, and 4.0 V. i) The log‐scale drain–source current versus gate voltage ( I ds – V gs ) characteristic of an In 2 O 3 NW transistor at V ds = 0.5 V with different laser‐fluence conditions. f–i) Reproduced with permission . Copyright 2011, American Chemical Society.…”
Section: Laser Irradiation Of Metal Oxides and Their Applicationsmentioning
confidence: 99%
See 2 more Smart Citations
“…In contrast to water, oxygen acts as an electron acceptor rather than an electron donor, so both adsorbed oxygen and a decrease in the oxygen vacancies lead to positive V th shifts in n-type metal oxide NWTs, as observed. 17 OD-PA prevents oxygen from reaching and penetrating the surface of the ZnO NWTs, ensuring a consistent performance.…”
Section: ■ Experimental Sectionmentioning
confidence: 99%