Control of electric field in 4H-SiC UMOSFET: Physical investigation

Jozi, Mohammad; Orouji, Ali A.; Fathipour, Morteza

doi:10.1016/j.physe.2016.04.010

Cited by 9 publications

(1 citation statement)

References 22 publications

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“…In order to reduce the resistance, n-region was added to cover the P + shielding region. This structure spreads out the electrons to the bottom of the P + shielding region conducting electrons in a downward direction [15][16][17]. Furthermore, a thinner gate oxide should be used to maintain the electrical characteristics with the addition of the shielding region.…”

Section: Introductionmentioning

confidence: 99%

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Krishnamurthy

Kannan

Hussin

2020

Mater. Res. Express

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This study proposes the High-κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (SEB) mechanism. Based on the findings, the influence of alternative high permittivity gate dielectrics to silicon dioxide (SiO 2 ) in TS-UMOSFET was discussed. Furthermore, in order to improve the performance of the device, its electrical behaviour was simulated with several high-κ dielectrics including Al 2 O 3 , Si 3 N 4 and Aluminium Nitride (AlN). When heavy ions strike the sensitive areas of the device, the electric field distribution and SEB threshold values were extracted. Based on the values yielded, (AlN) was identified as a promising high-κ material to achieve SEB-hardened TS-UMOSFET compared to the other highκ dielectrics. In conclusion, with (AlN), the HK TS-UMOSFET offers a high SEB tolerance and improved electrical characteristics.

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Section: Introductionmentioning

confidence: 99%