Control of Growth Modes by Carbon Mediation in Formation of Ge Quantum Dots on Si(100)

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

“…11–14 ML) from Fig. 2 , which is much higher than the typical values of 3 ML-6 ML obtained by conventional methods such as MBE, CVD, SPE and so on 12 , 13 , 15 , 19 . The corresponding QD density of sample Ge 2.0 (~ 10 8 cm −2 ) is also much lower than the reported values (~ 10 9 –10 10 cm −2 ).…”

“…Owing to many advantages, such as compatibility with Si-based technology, long carrier lifetime, δ-shaped density of states, strong response to near-infrared and mid-infrared bands, etc., Ge quantum dots (QDs) have shown a wide range of applications in optoelectronic devices 1 – 8 and attracted a lot of research work 9 – 11 . Over the past 30 years, Ge QDs have been grown mainly by materials equipment with low deposition rates (~ 0.01–0.04 Å/s), such as molecular beam epitaxy (MBE) 12 – 14 , chemical vapor deposition (CVD) 15 – 18 , and solid phase epitaxy (SPE) 19 , their corresponding complete technical system has been formed. In recent years, the idea of exploring the growth of Ge QDs has been further broadened, some work using typical physical vapor deposition (PVD) techniques such as ion beam sputtering 20 , high-vacuum evaporation 21 , e-gun deposition 22 , 23 to prepare Ge QDs has been reported.…”