Control of reactive plasmas for low- k /Cu integration

Tatsumi, Tetsuya

doi:10.1016/j.apsusc.2007.02.008

Cited by 36 publications

(18 citation statements)

References 37 publications

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“…7(a) for positive ions and (b) for negative ions, for P ¼ 500 W, p ¼ 5 mTorr, and Ar flow of 1 sccm. While up to 6 positive ion species were detected ( 6 . The same behavior was observed for p ranging from 1 up to 10 mTorr and for discharge powers below 1600 W. This result is well correlated with the fact that SF À 5 and SF À 6 are formed for T e 0.7 eV while F À formation peaks around 1 eV.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] So far, only positive ions at low pressure and high plasma densities are used to ensure good anisotropy and high etching rates. [8][9][10][11][12][13][14][15][16][17][18][19] The continuous decreasing of the node size (now below 100 nm) at an increased devices density bring new challenges that need to be solved, including: charging-induced gate breakdown; 20,21 dependence of the etching rate on the pattern size (low RIE-lag effect 22 or aspect-ratio-dependence etching effect) and on the laid-out pattern density (microloading effect); 23 and handling of new materials such as low-k and high-k. 1 In particular, the notch phenomenon 24 induced by side etching with positive ions deflected by the positive space charge accumulated at the bottom of patterns has pointed to the possibility to reduce the charge build-up effect by etching with negative ions that induce lower charging potentials for similar ion fluxes and ion energy.…”

Section: Introductionmentioning

confidence: 99%

“…Experiments are performed in Ar/SF 6 and Ar/SF 6 /O 2 gas mixtures and plasma parameters are characterized by mass spectrometry and electrostatic probe.…”

Section: Introductionmentioning

confidence: 99%

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High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

Stamate

Draghici

2012

Journal of Applied Physics

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A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 × 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF6 gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F−. The magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF6/O2 mixtures was almost similar with that by positive ions reaching 700 nm/min.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

Stamate

Draghici

2012

Journal of Applied Physics

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“…This value is within the experimental error, revealing that the penetration depth that is caused by the plasma treatment depends less on the NH 3 /N 2 gas ratio than on the plasma treatment time, power, and method. 17 Additionally, the total thicknesses shrink after performing the plasma treatment, suggesting that the porous low-k films were densified by vacuum ultraviolet radiation, radical etching, and ion bombardment in the plasma with NH 3 /N 2 mixed gas. Furthermore, the sample was treated with pure NH 3 gas exhibited slightly higher thickness shrinkage than the others.…”

Section: Methodsmentioning

confidence: 99%

Effect of NH3/N2 ratio in plasma treatment on porous low dielectric constant SiCOH materials

Huang

Chang

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This study investigates the effect of the NH 3 /N 2 ratio in plasma treatment on the physical and electrical properties as well as the reliability characteristics of porous low-k films. All of the plasma treatments resulted in the formation of a thin and modified layer on the surface of porous low-k films, and the properties of this modified layer were influenced by the NH 3 /N 2 ratio in the plasma. Experimental results indicated that pure N 2 gas plasma treatment formed an amide-like/ nitride-like layer on the surface, which apparently leads to a higher increase in the dielectric constant. Plasma treatment with a mixture of NH 3 /N 2 gas induced more moisture uptake on the surface of the low-k dielectric, degrading the electrical performance and reliability. Among all plasma treatment with NH 3 /N 2 mixed gas, that with pure NH 3 gas yielded low-k dielectrics with the worse electrical and reliability characteristics. V

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“…4,80,81) Because of this, a new technology for the prediction and control of these properties is required for the next generation of CMOS devices, in addition to the conventional waferless auto clean (WAC) process with SF 6 = O 2 plasma and the process of chamber wall coating with fluorocarbon plasma before etching. Specifically, hydrogen is normally included in various etching processes, such as those for the Si gate, SiN side wall (SW), and SiO 2 contact hole, and it has a high reactivity with other species.…”

Section: Plasma-chamber Wall Interactionmentioning

confidence: 99%

Advanced simulation technology for etching process design for CMOS device applications

Kuboi¹,

Fukasawa²,

Tatsumi³

2016

Jpn. J. Appl. Phys.

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Plasma etching is a critical process for the realization of high performance in the next generation of CMOS devices. To predict and control fluctuations in the etching properties accurately during mass production, it is essential that etching process simulation technology considers fluctuations in the plasma chamber wall conditions, the effects of by-products on the critical dimensions, the Si recess dependence on the wafer open area ratio and local pattern structure, and the time-dependent plasma-induced damage distribution associated with the three-dimensional feature scale profile at the 100 nm level. This consideration can overcome the issues with conventional simulations performed under the assumed ideal conditions, which are not accurate enough for practical process design. In this article, these advanced process simulation technologies are reviewed, and, from the results of suitable process simulations, a new etching system that automatically controls the etching properties is proposed to enable stable CMOS device fabrication with high yields.

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Control of reactive plasmas for low- k /Cu integration

Cited by 36 publications

References 37 publications

High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

Effect of NH3/N2 ratio in plasma treatment on porous low dielectric constant SiCOH materials

Advanced simulation technology for etching process design for CMOS device applications

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