Control of Seed Detachment in Au-Assisted GaN Nanowire Growths

Abstract

Controlling and understanding the surface migration of Au atoms are useful in tailoring the length, shape, and structure of nanowires for future applications.' ASSOCIATED CONTENT b S Supporting Information. TEM images of the Au-Ga seeds diffusing along a GaN nanowire surface as the nanowire was grown under intermediate gallium partial pressure after a growth period of 20 min; EDS results of Au-Ga seeds and GaN nanowires in Figure 3 of the manuscript; and a schematic illustration of a Au-assisted VLS (or VSS) mechanism for the growth of GaN nanowires. This material is available free of charge via the Internet at http://pubs.acs.org.

Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts

“…Gallium nitride (GaN) is a promising material for optoelectric and electronic devices such as laser diodes, light-emitting diodes, solar cells, and high-performance field effect transistors [1,2] Meanwhile, nanowires have been of great interest as building blocks for high-performance nanodevices because of their high crystalline quality, large surface-to-volume ratio, and size confinement effects. Accordingly, GaN nanowires have great potential for application in high-performance optoelectronics [3]–[5].…”

“…The growth of GaN nanowires have been discussed in many previous studies [2,6,7]. The modulation of nanowires, for example, the preparation of a vertical array, creation of a heterostructure, and doping, has also been studied to exploit the potential of nanowires.…”

Characteristics of Strain-Induced InxGa1–xAs Nanowires Grown on Si(111) Substrates

“…6 Onedimensional (1-D) heteroepitaxy on the other hand can accommodate mismatch strain through lateral strain relaxation, allowing NWs epitaxially grown on substrates with as much as 46% lattice mismatch. 7,8 Epitaxial In x Ga 1−x As NWs can be synthesized using a variety of methods such as selective-area epitaxy (SAE) or vapor−liquid−solid (VLS) methods. 9−13 However, the former is a time-consuming process due to the preparation of the e-beam lithography pattern, 9 and the latter has the tendency to incorporate metal in the NWs, which could induce deep levels in the bandgap and degrade the device performance.…”

Synthetic Strategies and Applications of GaN Nanowires

“…Hou and coworkers [30] first reported the Au-assisted GaN nanowire growths by the VSS mechanism. The control of the migration and detaching of Au seeds during the growth of GaN nanowires in the plasma-enhanced chemical vapor deposition system was realized.…”

“…But its biggest advantage is no catalyst addition, and therefore catalyst pollution is avoided. In principle so long as suitable supersaturation and nucleation sites are provided we can get one-dimensional nanomaterial of any material [30]. This mechanism contains much simpler process, because without the use of catalyst many interfaces are avoided.…”