Control of Vertically Coupled<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>InGaAs</mml:mi><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi></mml:math>Quantum Dots with Electric Fields

Ortner, G.; Bayer, М.; Lyanda-Geller, Yuli; Reinecke, T. L.; Kress, A.; Reithmaier, J.P.; Forchel, A.

doi:10.1103/physrevlett.94.157401

Cited by 147 publications

(94 citation statements)

References 19 publications

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“…6 In the past decade, most research related to QDMs has focused on vertically stacked QDMs (VQDMs). [7][8][9][10][11] In a VQDM, two or more adjacent dots separated by thin barrier(s) are stacked one by one along the growth axis. 12 Using wellestablished epitaxial growth protocols, geometrical properties such as height, barrier thickness, and relative position of the QDs can all be precisely controlled.…”

Section: Introductionmentioning

confidence: 99%

Coulomb interaction signatures in self-assembled lateral quantum dot molecules

et al. 2013

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We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the quantum dot molecule. Using a combination of computational modeling and experimental analysis, we assign the observed discrete spectral lines to specific charge distributions. We explain the dynamic processes that lead to these charge configurations through electrical injection and optical generation. Our systemic analysis provides evidence of interdot tunneling of electrons as predicted in previous theoretical work.

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Section: Introductionmentioning

confidence: 99%

Coulomb interaction signatures in self-assembled lateral quantum dot molecules

et al. 2013

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“…Both QDs forming a QDM possess the discrete, atom-like energy spectrum of single QDs. The molecular character of a QD pair is most clearly revealed in form of avoided crossings of the dots' spectrally sharp optical transition lines in an electric field-dispersed optical spectrum of the QDM [36][37][38][39] . An electric field along the QDM axis shifts the energy levels of both dots overall and with respect to each other, shifting charges between and in and out of the QDM (Fig.…”

Section: Resultsmentioning

confidence: 99%

Optophononics with coupled quantum dots

et al. 2014

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Modern technology is founded on the intimate understanding of how to utilize and control electrons. Next to electrons, nature uses phonons, quantized vibrations of an elastic structure, to carry energy, momentum and even information through solids. Phonons permeate the crystalline components of modern technology, yet in terms of technological utilization phonons are far from being on par with electrons. Here we demonstrate how phonons can be employed to render a single quantum dot pair optically transparent. This phonon-induced transparency is realized via the formation of a molecular polaron, the result of a Fano-type quantum interference, which proves that we have accomplished making typically incoherent and dissipative phonons behave in a coherent and non-dissipative manner. We find the transparency to be widely tunable by electronic and optical means. Thereby we show amplification of weakest coupling channels. We further outline the molecular polaron's potential as a control element in phononic circuitry architecture.

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“…[15] Also, DQDs are more versatile than single QDs since the coupling between the two QDs offers an additional control mechanism, as the tunneling can be tuned by using externally applied electric fields. [16,17,18,19] Using the spin of holes in qubits requires control over the hole spin relaxation (T 1 ) and decoherence (T 2 ) times, the latter being related to the former at low temperatures. [20] In the presence of external magnetic fields, the main mechanism of spin relaxation for the valence band is usually phonon scattering mediated by spin-orbit interaction (SOI).…”

Section: Introductionmentioning

confidence: 99%

Hole spin relaxation in InAs/GaAs quantum dot molecules

Segarra

Climente

Rajadell

et al. 2015

J. Phys.: Condens. Matter

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Abstract. We calculate the spin-orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger-Kohn Hamiltonian, which considers coupling of heavy-and light-holes, reveals that hole spin lifetimes (T 1 ) of molecular states significantly exceed those of single quantum dot states. However, this effect can be overcome when cubic Dresselhaus spin-orbit interaction is strong. Misalignment of the dots along the stacking direction is also found to be an important source of spin relaxation.

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Control of Vertically CoupledInGaAs/GaAsQuantum Dots with Electric Fields

Cited by 147 publications

References 19 publications

Coulomb interaction signatures in self-assembled lateral quantum dot molecules

Coulomb interaction signatures in self-assembled lateral quantum dot molecules

Optophononics with coupled quantum dots

Hole spin relaxation in InAs/GaAs quantum dot molecules

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