“…These applications demand microwave substrate materials with high‐quality factor ( Q × f ) to achieve high selectivity, low dielectric constant (ε r ) to reduce the delay time of electronic signal transmission, and almost zero temperature coefficient of resonant frequency (τ f ) for frequency stability. In the past years, a large number of ceramics with good microwave dielectric properties have been reported as promising candidates for substrate application, such as Mg 2 SiO 4 ( Q × f = 240 000 GHz, ε r = 6–7, τ f = −60 ppm/°C), Al 2 O 3 (tanδ = 2.7 × 10 −5 at 10 GHz, ε r = 10), MgO (ε r = 7–10, Q × f = 113 600 GHz), and Li 2 MgSiO 4 (tanδ = 5.2 × 10 −4 at 8 GHz, ε r = 5.1) . Among these materials, forsterite Mg 2 SiO 4 has attracted a great attention with low dielectric constant and high‐quality factor …”