Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass

Bhatnagar, Parijat; Panda, Siddhartha; Edleman, N. L.; Allen, Scott D.; Wise, Richard; Mahorowala, Arpan P.

doi:10.1063/1.2717141

Cited by 8 publications

(7 citation statements)

References 16 publications

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“…75 Gas flow rate and composition are crucial to achieving low final LER. 33,76,77 For example, LER was reduced in plasma etch process by using CF 3 I gas rather than conventional gases such as CF 4 and CHF 3 . 78 The practical edge roughness occurs in top view and also in side view, determining the complexity of LER change during pattern transfer process.…”

Section: Pattern Transfermentioning

confidence: 99%

Line width roughness and its control on photomask

Kumar

2013

SPIE Proceedings

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Line edge roughness (LER) or line width roughness (LWR) is a fundamental challenge in the semiconductor industry. LWR on transistor gate length is a dominant parameter for determining the variability of threshold voltage, on-current and off-current, and LER on interconnect impacts breakdown voltages. Integrated circuit (IC) scaling enabled by lithography is the technology to increase device density and improve performance. However, scaling below 32nn technology node induces short-channel effect (SCE) because of the short distance between the transistor source and the drain. Final LER on the working layer results from several processes, and, thus, LER controls rely on lithography, resist properties, post-resist-development processing, pattern transfer methods, and photomask LER. Now, pattern generation is main source of LER, where short exposure wavelength and consecutive low photon numbers result in discrete photon flux and shot noise, causing high LER. Extreme ultraviolet lithography (EUVL) uses shorter wavelengths and a lower dose than the current 193 nm lithography, making LWR one of the three most critical challenges. Characterization of LER is also a challenge. The current rms method is broadly used; however, this approach is not enough and a better method has yet to be established.

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Section: Pattern Transfermentioning

confidence: 99%

Line width roughness and its control on photomask

Kumar

2013

SPIE Proceedings

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“…To overcome the limitations in semiconductors and PDMS based technologies, many glass fabrication processes have been developed to produce sidewalls with average surface roughness values in the nanometer range, such as glass etching [4] and laser drilling [5].…”

Section: Introductionmentioning

confidence: 99%

In-plane spectroscopy of microfluidic channels using photosensitive glass

Tantawi

Gaillard

Helton

et al. 2012

2012 Proceedings of IEEE Southeastcon

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We demonstrate the use of microstructures made in Apex ™ photosensitive glass for in-plane investigation of microfluidic systems by demonstrating the ability to detect chemical fluids through the etched glass walls in the Visible and Near Infrared (NIR) regions. Absorption spectra of liquid ethanol and Raman spectroscopy of Dimethyl sulfoxide in Apex microcuvettes demonstrates their high potential in analyzing stacks of microfluidic systems from the sidewalls. Thus eliminating the need for non-planar observation of microfluidic systems.

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“…These vary between etching of lithographically defined patterns on the surface of glass [1,2], laser drilling [3] and photodefinable glass [4][5][6][7]. There are very few procedures that lend themselves to the production of optically smooth and transparent sidewalls.…”

Section: Introductionmentioning

confidence: 99%

“…There are very few procedures that lend themselves to the production of optically smooth and transparent sidewalls. For example, dry etching of borosilicate glasses has achieved optical quality sidewalls for etch depths of approximately 1 μm [1], but this process has not been extended to devices several hundreds of microns deep. Similarly wet etching of fused silica has recently demonstrated the ability to 1 Assistant Professor and Associate Director of NMDC, Dept.…”

Section: Introductionmentioning

confidence: 99%

“…For example, dry etching of borosilicate glasses has achieved optical quality sidewalls for etch depths of approximately 1 μm [1], but this process has not been extended to devices several hundreds of microns deep. Similarly wet etching of fused silica has recently demonstrated the ability to 1 Assistant Professor and Associate Director of NMDC, Dept. of Electrical Engineering, University of Alabama in Huntsville, OB 406 Huntsville, AL 35899.…”

Section: Introductionmentioning

confidence: 99%

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Processing of photosensitive APEX™ glass structures with smooth and transparent sidewalls

Tantawi¹,

Oates²,

Kamali-Sarvestani³

et al. 2010

J. Micromech. Microeng.

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Improvement of the surface roughness and optical transparency of microstructures lithographically fabricated in APEX TM glass was accomplished through a post-etch anneal. An optimal dose of UV radiation is found to be 24 J g −1 for a wavelength of 280 nm, after which etch rate in HF acid and selectivity saturate. The anneal process, while originally designed to improve the surface roughness by reflowing, can be used to join multiple structures for the creation of optically transparent three-dimensional devices. The resulting glass microstructures demonstrate an average sidewall RMS surface roughness that is reduced from 0.7 μm to 32.7 nm which is adequate for optical signal detection across a wide frequency band that includes the visible spectrum.

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Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass

Cited by 8 publications

References 16 publications

Line width roughness and its control on photomask

Line width roughness and its control on photomask

In-plane spectroscopy of microfluidic channels using photosensitive glass

Processing of photosensitive APEX™ glass structures with smooth and transparent sidewalls

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