Controlling the Electrical Transport Properties of Nanocontacts to Nanowires

Lord, Alex M.; Maffeïs, Thierry G.G.; Kryvchenkova, Olga; Cobley, Richard J.; Kálna, K.; Kepaptsoglou, Demie; Ramasse, Quentin M.; Walton, Alex S.; Ward, Michael B.; Köble, J.; Wilks, S.P.

doi:10.1021/nl503743t

Cited by 35 publications

(72 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, it is interesting to note that we also detect some contribution from interband transitions for TiO 2 /Au nanostructures, even though at a lower extent than for TiN below 500 nm that is in agreement with the recent data . This can be due to nanoscale effects that improve tunneling probability in a Schottky diode accounting for deviation from ideal rectification relevant to this case. Below we provide a more detailed discussion.…”

Section: Resultssupporting

confidence: 91%

“…Titanium and TiO 2 pads are fabricated atop thin films of Au and TiN through standard electron beam lithography and electron beam evaporation (Figure S14, Supporting Information). These planar systems represent a powerful approach to study physical phenomena at solid–solid interfaces although the Schottky barrier height in the real nanostructures could be influenced by different crystal facets, nanoparticle size, and interface atomic structure, thus deviating from model behavior . The current–voltage ( I–V ) curves are shown in Figure a,b.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Broadband Hot‐Electron Collection for Solar Water Splitting with Plasmonic Titanium Nitride

Naldoni

Guler

Wang

et al. 2017

Advanced Optical Materials

281

204

View full text Add to dashboard Cite

absorption. Although photocatalysis is already used in small-scale abatement of both indoor and outdoor pollution, the low efficiency (5%-10%) of solar-to-chemical energy conversion limits further breakthroughs in strategic applications such as hydrogen production and photovoltaics (PVs). [1,2] The engineering of composite interfaces for optimized operation is a key step to increase the solar absorption, electron-hole separation, and collection, and finally to provide high reaction yield. [3,4] The use of plasmonic nanostructures in energy conversion applications has been recently demonstrated with the enhanced performance of solar-to-fuels and solar-to-electricity devices. [5][6][7][8][9][10][11] Surface plasmons concentrate light into nanoscale volumes at the interface of a dielectric or a semiconductor providing intense electromagnetic field localization and improved scattering. The possibility to harness hot electrons generated from the surface plasmon decay [12,13] has shown to be a promising route toward selective nanocatalysis, [14][15][16][17][18][19][20] full-spectrum solar water splitting, [21][22][23] and ultrafast photodetection. [24][25][26][27] The nonradiative decay of surface plasmons, occurring in the 40-150 fs timescale, [12] produces a population of highly energetic (hot) electrons that are stabilized through injection into the semiconductor conduction band across a Schottky barrier. [28] Plasmonic nanoparticles (NPs) enable the efficient conversion of solar light into electrons with an energy well below the band gap of the semiconductor but limited to energies higher than the potential barrier (φ B ). As of yet, these demonstrations have been limited to NPs made of plasmonic noble metals such as Ag and Au. Despite their good optical performance, several challenges remain for noble metal NPs including high cost, poor chemical (Ag) and thermal stability (Au, Ag), diffusion into surrounding structures, and CMOS incompatibility, which hinders the practical implementation of conventional plasmonic structures.Aluminum nanocrystals are alternative plasmonic photocatalysts that provide efficient hot electron generation at low cost (i.e., high abundance of Al on the earth crust). [29][30][31][32][33][34] Nevertheless, issues for large-scale applications are related to Al NPs preparation, due to explosive reactivity of Al molecular The use of hot electrons generated from the decay of surface plasmons is a novel concept that promises to increase the conversion yield in solar energy technologies. Titanium nitride (TiN) is an emerging plasmonic material that offers compatibility with complementary metal-oxide-semiconductor (CMOS) technology, corrosion resistance, as well as mechanical strength and durability, thus outperforming noble metals in terms of cost, mechanical, chemical, and thermal stability. Here, it is shown that plasmonic TiN can inject into TiO 2 twice as many hot electrons as Au nanoparticles. TiO 2 nanowires decorated with TiN nanoparticles show higher photocurrent enhancement than decorat...

show abstract

Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Broadband Hot‐Electron Collection for Solar Water Splitting with Plasmonic Titanium Nitride

Naldoni

Guler

Wang

et al. 2017

Advanced Optical Materials

281

204

View full text Add to dashboard Cite

show abstract

“…As recently found by Wilks' group [15], the mech anisms of conductive performance for ZnO NWs can be shifted from diodelike to ohmiclike by size of an Au cap on the top of the NW, or more correctly by the relation of diameters of a metal cap and a NW. Interestingly, in their essential work a multiprobe contact device was utilized, although the results ap ply to the case of heavily doped NWs with a carrier concentration of approximately 10 18 cm -3 .…”

Section: Introductionmentioning

confidence: 53%

“…Several works [15,34,35] appeared concerning (a) visuali zation of a scanning probe during conductive mea surements, (b) in situ adjustments or the socalled image pattern recognition techniques, and (c) multi ple probe operation by a scanning probe station. They can be further combined into a fast comprehensive tool to study separate nanowires by precise contact measurements on AFM.…”

Section: Discussionmentioning

confidence: 99%

Influence of surface passivation on electric properties of individual GaAs nanowires studied by current–voltage AFM measurements

Geydt¹,

Alekseev²,

Dunaevskiy³

et al. 2016

Lith. J. Phys.

View full text Add to dashboard Cite

Current-voltage (I-V) characteristics of vertical p-GaAs nanowires (NWs) covered by different surface passivation materials were experimentally measured by conductive atomic force microscopy (C-AFM). The obtained I-V curves for individual NWs with a diameter of 100 nm covered with AlGaAs, GaN, GaP or InP shell layers were compared to analyse the influence of surface passivation on the density of surface states and choose the most beneficial passivating material for technological applications. We have found the absence of a Schottky barrier between the golden catalytic cap on the top of a NW and the nanowire situated below and covered with an ultrathin GaP passivating layer. It was suggested that passivating material can arrange the heterostructure configuration with the GaAs NW near the Au cap. The latter mechanism was proposed to explain a strong energy barrier found in nanowires covered with InP passivation. AlGaAs passivation affected the forward threshold voltage of nanowires for NWs, which was measured simultaneously with the resistivity of each individual vertical structure from an array by means of AFM in the regime of measuring the I-V curves and onefold calculations. We made an attempt to develop the methodology of measurement and characterization of electric properties of passivated NWs.

show abstract

“…Thermionic emission, recombination, and tunneling across the Schottky barrier at the metal-nanowire interface were included as possible transport mechanisms in our simulations. 20 The thermionic emission current was calculated by taking into account surface recombination velocity, field-dependent barrier lowering, static dipole effects, and band-to-band recombination. 21 Tunneling for electrons and holes was calculated by a built-in universal Schottky tunneling model.…”

mentioning

confidence: 99%

I–V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide

Alekseev

Geydt

Dunaevskiy

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail.Powered by TCPDF (www.tcpdf.org) This material is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not be offered, whether for sale or otherwise to anyone who is not an authorised user. Alekseev, P. A.; Geydt, P.; Dunaevskiy, M. S.; Lähderanta, E.; Haggrén, T.; Kakko, J. P.; Lipsanen, H. I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide

show abstract

Controlling the Electrical Transport Properties of Nanocontacts to Nanowires

Cited by 35 publications

References 42 publications

Broadband Hot‐Electron Collection for Solar Water Splitting with Plasmonic Titanium Nitride

Broadband Hot‐Electron Collection for Solar Water Splitting with Plasmonic Titanium Nitride

Influence of surface passivation on electric properties of individual GaAs nanowires studied by current–voltage AFM measurements

I–V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide

Contact Info

Product

Resources

About