Controlling the Grain Size of Dion–Jacobson-Phase Two-Dimensional Layered Perovskite for Memory Application

Abstract

Organic–inorganic halide perovskites (OIHPs) have emerged as an active layer for resistive switching memory (RSM). Among various OIHPs, two-dimensional OIHPs are advantageous in RSMs because of their stability. This stability can be further improved using two-dimensional Dion–Jacobson OIHPs. Moreover, OIHP-based RSMs operated by the formation of halide-ion filaments are affected by grain boundaries because they can act as a shortcut for ion migration. Therefore, it is essential to control the grains in OIHPs for reliable memory operation. Here, we present RSMs using Dion–Jacobson OIHP with controlled grain sizes. The grain sizes of the OIHP are effectively controlled by adjusting the ratio of the N,N-dimethylformamide and dimethyl sulfoxide. The controlled grain sizes can modulate the paths for halide ion migration, which enables the change of the on/off ratio in RSM. In addition, cross-point array structure is essential for high-density memory applications. However, in the cross-point array structure, unwanted current flow through unselected memory cells can happen due to sneak-current paths, so it is necessary to suppress leakage current from neighboring cells by adopting selector devices. We demonstrate the application of selector devices to OIHP-based RSMs to prevent sneak current paths. These results provide the potential of OIHP for use in high-density memory applications.

Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices

“…Further, the values obtained are analogous with previous polycrystalline thin film trap density values obtained for MAPI. 40–43 At higher voltages, the memory devices are observed to exist as in child's region, hence according to Mott–Gurney's law,where J d represents the current density, V is the applied voltage and μ is the charge carrier mobility. The estimated mobilities for the inorganic–organic cation mixture at the A-site showed enhanced values (0.23 and 0.69 cm 2 s −1 V −1 for CsMAPI and CsMAFAPI, respectively) compared to the pure organic cations exhibiting (0.16, 0.10, and 0.03 cm 2 s −1 V −1 for MAPI, FAPI, and MAFAPI) lower charge carrier mobility due to the poor charge transport and prompt recombination due to the defects.…”

“…Further, the values obtained are analogous with previous polycrystalline thin film trap density values obtained for MAPI. [40][41][42][43] At higher voltages, the memory devices are observed to exist as in child's region, hence according to Mott-Gurney's law,…”

“…Further, the discharge of inevitable parasitic capacitance elements during the prompt resistance transitions can induce transient overshoots through the CFs, especially from grain boundaries. [36][37][38][39][40][41][42][43][44][45] A vacancy-mediated conduction mechanism is proposed for the Ag/APbI 3 /FTO devices, where, V I with a low activation energy of migration forms a conductive pathway. 46 The diffusion coefficient (D) is determined from the earlier estimated charge carrier mobility (μ) at room temperature (T ) using the relation, 47…”

Perovskites in Next Generation Memory Devices

“…Dion-Jacobson organic-inorganic halide perovskite (OIHP) has been proven as a resistive switching memory (RSM), with grain size varying to improve grain boundaries [63]. By adjusting the ratio of N, N-dimethylformamide to dimethyl sulfoxide in the reaction mixture, the grain structure of the OIHP may be easily controlled.…”

Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process

“…With the flexibility of the perovskite structure as the material platform, it possesses a broad range of switching physics suitable for a wide variety of neuromorphic computing achitectures . Perovskite-based memristive devices have been demonstrated to function as artificial synapses exhibiting essential synaptic behaviors for neuromuscular systems, pupil reflex, and light-sensitive optogenetic applications. − Additionally, integration of two-dimensional structures, , mixed formulations, , and nanocrystals , further increases the already vast degrees of freedom or state variables in perovskite-based memristors allowing tunability and versatility specific to the desired implementation. However, with the inclusion of various intermediate buffers, , a complete picture of the resistive switching mechanism is imperative for tailoring the design of reliable memristive devices for more versatile applications.…”