CONTUNT: Thin SOI control tunneling transistor

Dobrovolsky, V.; Rossokhaty, V.; Cristoloveanu, S.

doi:10.1016/j.sse.2006.03.002

Cited by 10 publications

(8 citation statements)

References 20 publications

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“…(1)- (4). However the increase in drain current in an SDGTFET is mostly brought about by the changes in the band-structure in strained silicon.…”

Section: (B)mentioning

confidence: 99%

“…Many novel device designs have been suggested in order to tackle this problem. Different types of transistors that utilize the band-to-band tunneling as the basic operating principle have been demonstrated in the literature [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] . These transistors offer advantages in terms of very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature sensitivity.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

Saurabh

Kumar

2009

jjap

128

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Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit applications, these problems need to be tackled. In this paper, a novel lateral strained double-gate TFET (SDGTFET) is presented. Using device simulation, we show that the SDGTFET has a higher on-current, low leakage, low threshold voltage, excellent subthreshold slope, and good short channel effects and also meets important ITRS guidelines. ___________________________________________

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“…(1)- (4). However the increase in drain current in an SDGTFET is mostly brought about by the changes in the band-structure in strained silicon.…”

Section: (B)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

Saurabh

Kumar

2009

jjap

128

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“…Several analytical TFET model have been published to date. [17][18][19][20] They are generally based on analytically solving the Poisson equation at the tunneling junction and then calculating the tunneling current by inserting the obtained electric field into Kane's model for interband tunneling. In Ref.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, we propose an analytical model for the TFET regarded as series connection of a gate-controllable tunneling diode (GTD) with a MOSFET. The potential distribution around the tunneling junction is obtained by solving the Poisson equation with the pseudo-2D method, 17,20 including the influence of the channel potential that is determined by the series-connected MOSFET. Kane's model serves to derive the tunneling current, but using the average electric field along shortest tunneling width (E TW ) rather than the local maximum electric field (E max ).…”

Section: Introductionmentioning

confidence: 99%

A tunneling field effect transistor model combining interband tunneling with channel transport

Wan

Royer

Zaslavsky

et al. 2011

Journal of Applied Physics

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We present a model for the tunneling field-effect transistor (TFET) comprising a series connection of a metal-oxide-semiconductor FET (MOSFET) with a gate-controllable tunneling diode. Through the introduction of MOSFET in the model, both operational regimes of TFET are handled correctly, with the tunneling diode dominating at low interband tunneling current and the MOSFET component dominating at high tunneling current. The comparison between our model, TCAD simulations and experimental data on TFETs with different gate oxide and channel thicknesses over the full range of gate and drain bias confirms the model's reliability and accuracy. At low tunneling current, the model further simplifies to a compact analytical model. With minor modifications, our model can also be applied to multi-gate TFET architectures. V

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“…The gate controls both the impact-ionization current and the tunneling current [8]. However, the calculations under formulas [1] have showed, that in our experimental conditions the electron tunneling probability was extremely small (<10 À13 ), leading to a negligible tunneling current.…”

Section: Discussionmentioning

confidence: 81%

Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state

Dobrovolsky¹,

Сизов²,

Cristoloveanu³

et al. 2008

Solid-State Electronics

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CONTUNT: Thin SOI control tunneling transistor

Cited by 10 publications

References 20 publications

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

A tunneling field effect transistor model combining interband tunneling with channel transport

Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state

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