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Guest-host MEH-PPV/MCM-41 composites were prepared by liquid-phase self-assembly via insertion of poly[2-methoxy-5-(29-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) macromolecules inside mesoporous silica. The effect of the solvent nature on the polymer loading and luminescence properties of the composites was explained by retained memory of the chain conformation in the parent solution. The intensity of photoluminescence of the obtained composites was found to be two orders of magnitude greater than that of the neat polymer.

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In thin silicon-on-insulator structures, the gate effectively controls the longitudinal component of the electric field intensity in the pn+ junction, and thus the impact avalanche ionization of carriers. The present work proposes a device based on this operation principle: the control-impact-ionization-avalanche transistor, which achieves a transconductance of 0.14(A∕V)∕mm. According to the developed theoretical model and preliminary experimental data, the device can be optimized to achieve very high transconductance and frequencies such as several (A/V)/mm at frequencies of the order of 100MHz and lower, and about 1(A∕V)∕mm in 0.1–1THz range.