Converse longitudinal piezoelectric response of a ferroelectric thick film elastically coupled with a supporting substrate or underlayer

Zhang, Wei; Xu, Dingdian; Ouyang, Jun

doi:10.1088/0022-3727/46/18/185301

Cited by 5 publications

(4 citation statements)

References 20 publications

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“…The piezoelectric properties of Pb(Zr x Ti 1−x )O 3 film have been widely and systematically studied in the literatures [6,[19][20][21]. However, detailed investigations about lead-free ferroelectric films like BaTiO 3 (BTO) film heterostructure are very few.…”

Section: Resultsmentioning

confidence: 99%

Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

Zhang

Ouyang

et al. 2017

Acta Phys. Pol. A

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The effective piezoelectric coefficients of BaTiO3 ferroelectric films epitaxially grown on different single crystal substrates with finite thickness have been theoretically analyzed. The effective longitudinal converse piezoelectric coefficients d33 of film and "film-substrate" heterostructure all monotonously increased with increase of the film thickness fraction k, and the latter is always larger than the former at the range of 0 < k < 1. Meanwhile, we also found that the effective piezoelectric coefficients d33 were affected by the substrates due to different elastic constants. These results show that the elastic deformation and clamping effect of substrate have significant impacts on the piezoelectric behavior of bilayer heterostructure.

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Section: Resultsmentioning

confidence: 99%

Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

Zhang

Ouyang

et al. 2017

Acta Phys. Pol. A

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“…Furthermore, a larger d 33 modulus in the CBNO film grown on Si can be attributed to a stronger (200)/(020) film texture and a softer substrate. [23,24]. While the dominant (200)/(020) grains can yield a larger longitudinal piezoelectric response at a given electric field [1], a softer substrate has a smaller clamping effect and a larger "Poisson strain" contribution [23] to the piezoelectric deformation of the film, and, therefore, effectively enhances its d 33 piezoelectric modulus.…”

Section: Resultsmentioning

confidence: 99%

Enhancing electromechanical properties of CaBi2Nb2O9 thin films grown on Si

Zhang

Wang²,

Li³

et al. 2016

Ceramics International

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In this work, ferroelectric CaBi 2 Nb 2 O 9 thin films were grown on Yttria-stabilized zirconia (YSZ) -buffered (100) Si substrate via radio-frequency magnetron sputtering. X-Ray diffraction analysis showed that the CaBi 2 Nb 2 O 9 films were (200/020) textured, while the commonly-observed (00l) grains which are weakly polarizable have been eliminated. Enhanced dielectric (~533 @ 5 kHz) and ferroelectric properties (P r ~ 13μC/cm 2 , P s ~ 55μC/cm 2 @ 1 kHz) were achieved in this high Tc piezoelectric material, leading to a significant improvement of the d 33 piezoelectric modulus (from ~15-20 pm/V to ~30 pm/v). The method of strain engineering used in this work can be applied to the integration of other bismuth-layer structured ferroelectrics into Si-based microelectronics.

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“…As mentioned earlier, the analysis relies on the assumption that the thin piezoactive film is unclamped, and that the fractional change in capacitance (≈

Δ c_{π}

c_{π}_{0}

) is due to the change in physical dimensions of the device (

R_{0}

h_{0}

) and is independent of the dielectric constant (

κ_{normalr}

), as suggested by Equation (). [ 26,39 ] The in‐plane dimensions of the actual device are much larger than the total stack thickness (

R_{0} ≫ h_{0}

), which avoids edge effects [ 5,40 ] visible in simulations on small scale ( Figure b inset). Further, in the case of submicrometer dimensions, the thin film is always clamped to the substrate via van der Waals forces [ 41 ] ; thus, the assumption

σ = 0

is invalid.…”

Section: Discussionmentioning

confidence: 99%

Extraction of Electromechanical Coefficients from Capacitance–Voltage Measurements of Unannealed Solution‐Processed KNN Thin Films: Effects of Frequency and Electrostatic and Mechanical Deformation

Singh

Deol

Kritika

et al. 2022

Physica Status Solidi (a)

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A solution‐processed piezoceramic thin‐film MπM parallel‐plate capacitor structure to determine electromechanical coefficient using capacitance–voltage measurements is demonstrated. Electrical loading is applied to the capacitor to stimulate out‐of‐plane longitudinal and transverse elongation. The piezoelectric coefficient (d 33) is estimated using the spatial deviation of thin‐film dimensions as a function of the applied electric field. The results are validated using finite element method‐based modeling and compared with several measurements in literature, including piezoresponse force microscopy‐based measurements, which are generally considered unreliable due to strong electrostatic interactions between the tip‐cantilever, and the charged sample surface, wherein such artifacts result in the overestimation of the electromechanical response of the material under investigation.

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Converse longitudinal piezoelectric response of a ferroelectric thick film elastically coupled with a supporting substrate or underlayer

Cited by 5 publications

References 20 publications

Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

Enhancing electromechanical properties of CaBi2Nb2O9 thin films grown on Si

Extraction of Electromechanical Coefficients from Capacitance–Voltage Measurements of Unannealed Solution‐Processed KNN Thin Films: Effects of Frequency and Electrostatic and Mechanical Deformation

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Converse longitudinal piezoelectric response of a ferroelectric thick film elastically coupled with a supporting substrate or underlayer

Cited by 5 publications

References 20 publications

Effects of Elastic Coupling between BaTiO3 Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

Effects of Elastic Coupling between BaTiO3 Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

Enhancing electromechanical properties of CaBi2Nb2O9 thin films grown on Si

Extraction of Electromechanical Coefficients from Capacitance–Voltage Measurements of Unannealed Solution‐Processed KNN Thin Films: Effects of Frequency and Electrostatic and Mechanical Deformation

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Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients