Copper corrosion issue and analysis on copper damascene process

Song, Zhigang; Neo, S.P.; Oh, Chong Khiam; Redkar, S.; Lee, Y.P.

doi:10.1109/ipfa.2004.1345545

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…The extracted resistivity from the devices varies in the range 960–1570 μΩ cm, considerably steady, compared with that of Cu. This feature implies that the resistivity of Ta 2 NiSe 7 is expected to be comparable to that of Cu at a few nanometers scales, considering the void creation during the Cu deposition and Cu corrosion occurring in the damascene process. − …”

Section: Resultsmentioning

confidence: 97%

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇

Yoon

Jeon

Choi

et al. 2021

ACS Appl. Mater. Interfaces

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We synthesized ternary composition chalcogenide Ta 2 NiSe 7 , a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta 2 NiSe 7 , the breakdown current density (J BD ) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (V BD ) increased, and at 18 nm thickness, 35 MA cm −2 of J BD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the J BD can be increased to about 356 MA cm −2 . It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.

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Section: Resultsmentioning

confidence: 97%

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇

Yoon

Jeon

Choi

et al. 2021

ACS Appl. Mater. Interfaces

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“…The removal of this film can generate organic residues by re-deposition of low soluble by-products during scrub (3,(14)(15)(16)(17)(18). Several studies have illustrated severe corrosion issues due to improper removal of the passivation layer or uncontrolled passivition during the clean sequence (19)(20)(21). To summarize, the organic contamination must be removed from Cu by controlling the surface passivity all across the clean sequence.…”

Section: Control Of the Cu Passivity On The Polishing Platenmentioning

confidence: 99%

Post Cu-CMP Engineering Challenges for the 65 nm Technology Nodes and Beyond

Petitdidier¹,

Mellier²,

Guiheux³

et al. 2007

ECS Trans.

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In this paper, the methodology to improve the robustness and the efficacy of the overall post Cu-CMP sequence for 65 nm node technology is presented. The critical challenges to answer is to improve, in a manufacturing context, the slurry particles removal, the prevention of corrosion issue and organic residues generation, taking into account the change arising from new barrier slurry and the exposure of hydrophobic low-k film. The change caused by the exposure of hydrophobic low-k on slurry particle contamination and watermark is first discussed. The control of the Cu passivation and organic contamination on the polishing pad is shown to be a critical step for particle like defects and corrosion susceptibility. Finally, some clarifications on the relationship between the organic contamination of the Cu surface from the platen and the generation of organic residues are presented by studying the kinetic of its removal by scrub chemistries.

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Copper corrosion issue and analysis on copper damascene process

Cited by 2 publications

References 6 publications

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇

Post Cu-CMP Engineering Challenges for the 65 nm Technology Nodes and Beyond

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Copper corrosion issue and analysis on copper damascene process

Cited by 2 publications

References 6 publications

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7

Post Cu-CMP Engineering Challenges for the 65 nm Technology Nodes and Beyond

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High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇