Copper Film Deposition Using H and O Atoms

Abstract

The formation of thin copper films by H-atom reaction with Cu(FOD)2 and Cu(HFA)2 has been demonstrated at near room temperature. Oxygen atoms have now also been reacted with these β-diketonate copper complexes, producing films of copper oxide which can be readily reduced by subsequent treatment with H-atoms. The thin copper films produced are conductive and highly adherent. The oxygen atom reaction with the copper complex produces a visible chemiluminescent glow, yielding information on the nature of the reaction process.

The CVD growth of Cu films using H2 as carrier gas

“…[5][6][7] Moreover, it has been demonstrated that the technique of chemical vapor deposition (CVD) of copper possesses an intrinsic potential for void free filling of aggressive via and hole structures at near bulk resistivity and high growth rates. 8,9 However, in spite of significant progress in the development of copper based metallization schemes, several key processing and reliability issues remain to be resolved before copper technology becomes an industrial reality. Among them, the development of a CVD process capable of depositing high purity and dense films of copper with controlled microstructure at relatively low temperatures with high deposition rates is of vital interest for practical applications.…”