Copper precipitation in long‐time diffused silicon

Gleichmann, R.; Mohr, U.; Jegerlehner, K.

doi:10.1002/crat.2170180303

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…A selected area diffraction analysis [l] showed the CuSi lattice structure of the conipact precipitates (like detail A of Fig. 3), and by deep level transient spectroscopy (DLTS) energy levels of non-precipitated copper have been identified [2]. A third independent and more direct proof for the presence of copper was possible by an energy dispersive X-ray analysis of suitably arranged defects.…”

Section: Resultsmentioning

confidence: 99%

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New morphological types of CuSi precipitates in silicon and their electrical effects

Gleichmann¹,

Blumtritt²,

Heydenreich³

1983

Phys. Stat. Sol. (a)

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By combined SEM/EBIC and TEM observations the defect structure of long-time processed copper-contaminated floating zone silicon is investigated. Besides the dominant compact precipitates of CuSi different types of extended planar precipitates are found, which occur in form of large defect complexes with extremely low density. The observations indicate the different defect types to represent stages of a common transformation process of the metastable CuSi phase. The analysis of the EBIC contrasts shows all defects to be electrically active but with strong qualitative and quantitative differences.Die Defektstruktur von langzeitbehandeltem, mit Kupfer verunreinigtem Floating-zone Silizium wird mittels kombinierter REMund TEM-Techniken untersucht. Neben dominierenden kompakten C~Si-~4usscheidungen werden verschiedene Typen von ausgedehnten planaren Ausscheidnngen gefunden, die in Form grol3er Defektkomplexe mit sehr geringer Dichte auftreten. Die Beobachtungen deuten darauf hin, daa die verschiedenen Defekttypen Stadien eines gemeinsamen Umwandlungsprozesses der metastabilen CuSi-Phase darstellen. Die Analyse der EBIC-Kontraste zeigt, daB alle Defekte elektrisch wirksam sind, aber groae qualitative und quantitative Unterschiede bestehen.

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Section: Resultsmentioning

confidence: 99%

“…R I = 1 (cf. [2]). On the other hand, this restricts the thickness of the planar precipitate to a monolayer or a t most to a double layer.…”

Section: Discussionmentioning

confidence: 99%

New morphological types of CuSi precipitates in silicon and their electrical effects

Gleichmann¹,

Blumtritt²,

Heydenreich³

1983

Phys. Stat. Sol. (a)

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Copper precipitation in long‐time processed transistor samples

Gleichmann¹,

Breitenstein²,

Mohr

1983

Cryst. Res. Technol.

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Process‐induced crystal defects (point defects and extended defects) in completely processed transistor samples of floating zone silicon have been investigated by TEM analysis and DLTS measurements. It was possible to demonstrate that the lifetime of these samples is determined by the introduction of copper during the long‐time processing of the wafers. The predominant crystal defects within the wafer volume were found to be circular monolayers of copper silicide which due to their appearance could be easily confounded with stacking faults.

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Electrical Activity of Iron and Copper in Si, SiGe and Ge

Claeys

Simoen²

2018

Metal Impurities in Silicon- And Germanium-Based Technologies

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Copper precipitation in long‐time diffused silicon

Cited by 4 publications

References 5 publications

New morphological types of CuSi precipitates in silicon and their electrical effects

New morphological types of CuSi precipitates in silicon and their electrical effects

Copper precipitation in long‐time processed transistor samples

Electrical Activity of Iron and Copper in Si, SiGe and Ge

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