a), I?. SPIEC:KLRRRG (a), €1. CLEICHMAKN (b), and I). \TRUCK (a)The precipitation of oxygen in bulk dislocation-free Czochralski silicon subjected to isothermal annealing at temperatures b e h e e n 400 and 1100 "C is studied by means of infrared spectroscopy and transmission electron microscopy. From the changes in the infrared spectra observed after heat treatment it is concluded that (i) for low annealing temperatures (400 to 750 "C) the precipitates consist of amorphous SiO, (x < 2) which with rising temperature is transformed into amorphous SiO,, (ii) a t medium annealing temperatures (750 to 950 "C) a-cristobalite precipitat,es are formed, which (iii) at high annealing temperatures (950 to 1100 "C) are converted in amorphous SiO,. I n transmission electron microscopy the temperature range (i) is characterized by the appearance of "rod-like'' defects and its transformation into dislocation loops, and the ranges (ii) and (iii) b y the observation of platelet-shaped precipitates generating dislocation loops and stacking faults, leading to the conversion of the platelet-shapcd precipitates into microprecipitates.Es wird die PrLzipitat.ion von Sauerstoff in versetzungsfreiem Czochralski-Silizi~~m nach isothermaler Warmebehandlung bei Temperaturen zwischen 400 und 1100 "C mit Hilfe der Infrarotspektroskopie und der Transmissions-Elektronenmikroskopie untersncht. Bus den Anderungen im lnfrarotspektruni, die nach der Warmebehandlung beobachtet werden, wird geschlossen, daB fur niedrige Temperungstemperaturen (400 bis 750 "C) die Prazipitate aus aniorphem SiO, (x < 2) bestehen, welches sich mit wachsender Temperatnr in amorphes SiO, umwandelt., daB bei mitbleren Temperungstemperaturen (750 bis 950 "C) a-Cristobalit-Prazipitate gebildet werden, die sich bei hohen Temperungstemperaturen (950 bis 1100 "C) in amorphes SiO, umwandeln. I n der Transmissions-Elektronenmikroskopie wird der erste Temperaturbereich durch das Auftreten von ,,stabchenformigen" Defekten und deren Umwandlung in Versetzungsschleifen charakterisiert und die beiden anderen Temperaturbereiche durch die Beobachtung von plattchenformigen Prazipitaten, die Versetzungsschleifen und Stapelfehler erzeugen, was schlieDlirh z u einer Umwandlung der plattchenformigen Prazipitate in Mikroprazipitate fuhrt.

EBIC contrast measurements of individual surface‐parallel dislocations lying in the p‐region of a planar silicon diode and TEM analysis are correlated in order to study the EBIC contrast behaviour of dislocations of different type. The experimental results are in good agreement with theoretical predictions. In particular, it is possible to classify the dislocations with respect to their type by the real strength of the recombination activity. The surface recombination velocity and the minority carrier diffusion length of the bulk are determined using a simple theoretical model.

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During the long-time diffusion of transmutation doped silicon a variety of large CuSi precipitates is introduced into the material. The precipitates have been found to be metastable and transform during subsequent heat treatments. One of the most surprising results of such a transformation is the generation of large, extended monolayer precipitates, which are shown to represent the stable configuration of the precipitate system.