Precipitation of Copper in Transmutation Doped Silicon

Gleichmann, R.

doi:10.1557/proc-25-287

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…Given the high purity of the material and the high-temperature oxygenation treatment, the role of metal contamination should not be overlooked. It is, for example, well-known that Cu is already present in the starting material 39,40 and could, therefore, be involved in some of the deep levels reported here. An alternative explanation for the E c Ϫ 0.161 eV peak could thus be an interaction with interstitial copper, which is known to diffuse fast even at room temperature and to passivate other impurities.…”

Section: Discussionmentioning

confidence: 81%

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Simoen

Claeys

Job

et al. 2003

J. Electrochem. Soc.

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The behavior of oxygen in oxygen-doped high-resistivity (HR) n-type float-zone (FZ) silicon has been studied using a combination of analytical techniques. In the as-doped material, a large number of deep levels have been observed with deep-level transient spectroscopy. The corresponding parameters (concentration, activation energy, and trap signature) are given, and the possible identity is discussed in view of the presence of oxygen and other impurities in the material. In addition, the impact of a low-temperature hydrogen-plasma preannealing on the formation of oxygen thermal donors (OTDs) and other oxygen-related shallow thermal donors (STDs) at 450°C is described. It is shown that the introduction rate of OTDs in oxygenated HR FZ silicon is much smaller than in Czochralski silicon. In fact, for short anneals at 450°C following a plasma treatment, the STDs are the ones which have been predominantly created near the surface of the samples. © 2003 The Electrochemical Society. All rights reserved.

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Section: Discussionmentioning

confidence: 81%

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Simoen

Claeys

Job

et al. 2003

J. Electrochem. Soc.

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“…An acute, often lethal form leads to suppression of immune function as manifested by a hypoplastic syndrome including hypogammaglobulinemia, aplastic anemia, and thymic hypoplasia . The other form leads to a chronic GVHD characterized by a persistent lymphoid hyperplasia producing hypergammaglobulinemia and a systemic lupus erythematosus (SLE)-like disease [3][4][5][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

The induction of organ‐specific antibodies during the graft‐vs. ‐host reaction

Suiter

Gleichmann

et al. 1988

Eur J Immunol

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During the parent (P) into F1 hybrid graft-vs.-host reaction (GVHR), nuclear, leukocyte and erythrocyte autoantibodies are commonly seen. The specificity of these autoantibodies is reminiscent of those found in systemic lupus erythematosus (SLE) patients and SLE-prone mice. Organ-specific antibodies, however, including thyro-globulin (Tg) antibodies do not arise spontaneously. There have been conflicting reports about the ability of exogenous Tg to induce an anti-Tg response during the GVHR. We have re-examined this question in greater detail. Using the murine P----F1 GVHR system, the results of this work demonstrate that mouse thyroglobulin (MTg)-specific antibodies can be induced during a GVHR. However, mice must both be undergoing a GVHR, and have received exogenous MTg. The highest autoantibody response occurs if mice are injected with mouse thyroid extract or purified MTg at the time of P----F1 cell transfer. The anti-MTg response is MTg dose dependent. The ability to induce anti-MTg antibody was not major histocompatibility complex restricted, for both the DBA/2----B6D2F1 (low responder H-2 haplotypes to MTg), and AKR or DBA/2----AKD2F1 (high/low responder----high responder haplotype) GVHR gave similar responses. The anti-MTg titers peaked between days 7-10 and declined thereafter. In contrast, antibodies to dsDNA were not present at this early time, but developed after several weeks. We conclude that organ-specific autoantibodies can be induced during a GVHR if the appropriate antigen(s) are presented near the time of GVHR induction.

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Precipitation of Copper in Transmutation Doped Silicon

Cited by 2 publications

References 8 publications

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

The induction of organ‐specific antibodies during the graft‐vs. ‐host reaction

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