2013
DOI: 10.1007/s11664-013-2576-1
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Copper Wire Bonding Concerns and Best Practices

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Cited by 79 publications
(22 citation statements)
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“…Hence, in-depth first ball bonding should be characterized to minimize underneath silicon cratering phenomenon with Cu wirebonding. Key Cu wirebonding process developments and ongoing reliability monitoring have been laid out extensively to address those technical barriers to replace Au wirebonding in semiconductor packaging (Appelt et al, 2011;Zhong, 2009;Chauhan et al, 2013;Liu et al, 2012). Hiew et al (2012) disclosed detailed study on the challenges of development of a robust Cu wire bond process on thin Al bond pad (0.8-m thick) to meet Automotive Electronics Council Grade 1 (AECG1) requirements.…”
Section: Cu Wirebondingmentioning
confidence: 99%
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“…Hence, in-depth first ball bonding should be characterized to minimize underneath silicon cratering phenomenon with Cu wirebonding. Key Cu wirebonding process developments and ongoing reliability monitoring have been laid out extensively to address those technical barriers to replace Au wirebonding in semiconductor packaging (Appelt et al, 2011;Zhong, 2009;Chauhan et al, 2013;Liu et al, 2012). Hiew et al (2012) disclosed detailed study on the challenges of development of a robust Cu wire bond process on thin Al bond pad (0.8-m thick) to meet Automotive Electronics Council Grade 1 (AECG1) requirements.…”
Section: Cu Wirebondingmentioning
confidence: 99%
“…The primary source of corrosion is the moisture content and the presence of halide element, Cl Ϫ content in packaging material (Uno, 2011;Boettcher et al, 2010;Yamaji et al, 2011;Tai et al, 2012;Zeng et al, 2013). As alluded to earlier, it is not an easy plug-and-play to switch from Au wirebonding to Cu wirebonding.…”
Section: Cu Wirebondingmentioning
confidence: 99%
“…This involves significant efforts from the point of view of process development, material development, industrialization and reliability. Although Cu wire has been shown to have some advantages like a lower electrical resistance [1] and slower growth of intermetallic compound (IMC) [2], which could potentially provide better reliability at higher temperatures, Cu wire also has several weaknesses. Cu is harder than Au, sometimes leading to damage below the bond for certain bond pad structures [3] and the CuAl IMC region is known to be more sensitive to corrosion, which poses a serious reliability risk.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, copper wire bonding appears to be the alternate materials and various engineering studies on copper wire development have been reported [1]. Technical barriers and reliability challenges of Cu wire bonding in microelectronics packaging are well identified [2][3][4][5][6][7][8][9][10][11]. Au-Al microstructure evolution and intermetallic compound (IMC) formation is widely studied by Karpel et al [12].…”
Section: Introductionmentioning
confidence: 99%