The orientation and packing of semiconducting polymer chains at film interfaces crucially affects charge injection and transport at those interfaces. Although X-ray diffraction techniques have been used extensively as a structural probe, they are not particularly sensitive to these interfaces. Near-edge X-ray absorption fine-structure spectroscopy (NEXAFS), on the other hand, is sensitive to surface orientation and has been applied to investigate polymer structures, for example, in polyimide, [1] polyfluorene, [2] and polythiophene.[3] Here we show that NEXAFS band shapes and intensities are in fact also sensitive to the intermolecular p-interaction in regioregular poly(3-hexylthiophene) (rreg-P3HT) films. NEXAFS spectra of the same material deposited from different solvents and processing conditions are substantially different. This indicates a far more extensive breakdown of the "building-block" picture than previously reported, [4,5] allowing p-interactions to be studied. The surface sensitivity has recently been established to be ca. 2.5 nm for the total electron yield in rreg-P3HT, [6] which is highly relevant to interfacial charge transport and surface-induced self-organization. Rreg-P3HT thin films were deposited from a wide range of solvent qualities, and both the air and substrate interfaces were studied. Delamination was used to expose the substrate interface. We found that: i) the thiophene (Th)-ring orientation at both these interfaces was disordered and showed only a weak preference for the out-of-plane (oop) stacking favorable for field-effect mobility (l FET ); ii) the hexyl side chains were also disordered; and iii) the interchain p-interaction was strongly dependent on the deposition solvent quality, and varied in opposite directions between the air and substrate interfaces, being generally better at the substrate than the air interface. Direct imaging by friction-mode atomic force microscopy (AFM) revealed the expected presence of a mosaic surface morphology with a finer length scale than surface topography. Transistor l FET measurements suggested that the high l FET of rreg-P3HT is still limited by heterogeneity, which we attribute to the distribution of interface domains of varying orientation and/or packing. This ability to directly measure chain segmental orientation and interaction at the interfaces will open the way to their systematic optimization for even higher device performance.The self-organization behavior of polymers at interfaces is of significant scientific and technological interest. Much of the structural knowledge of conjugated polymers such as rreg-P3HT, a prototype high-l FET polymer, has come from wideangle [7,8] and grazing-angle X-ray diffraction (GIXRD) [9,10] studies. For polythiophenes, the chains p-stack to give short interchain distances (3.8 Å in rreg-P3HT) in the lamellae plane, but long distances (17 Å in rreg-P3HT) between lamellae separated by the alkyl side chains. [7][8][9][10] These p stacks further show a preference for either oop stacking in which the plane...