Correcting deviations in the shape of projected images in the electron beam block exposure column

Yamada, Akio; Yabe, Takayuki

doi:10.1116/1.1627817

Cited by 11 publications

(3 citation statements)

References 8 publications

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“…On the other hand, increasing resist sensitivity leads to a higher sensitivity to shot noise. The resist line-edge roughness is greatly impacted by the electron shot noise, which consequently reduce the process window [11]. Fig.…”

Section: Single Beam Throughput Limitsmentioning

confidence: 99%

Transitioning of direct e-beam write technology from research and development into production flow

Pain

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Manakli

et al. 2006

Microelectronic Engineering

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Section: Single Beam Throughput Limitsmentioning

confidence: 99%

Transitioning of direct e-beam write technology from research and development into production flow

Pain

Icard

Manakli

et al. 2006

Microelectronic Engineering

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“…3 Vector-scan Gaussian-beam systems 4,5 have not been accepted in maskmaking, multibeam systems [6][7][8][9][10][11][12] are still in the research and development phase. In raster scan, 1 the beam scans back and forth over the entire exposure area, turning on when it is over a pattern feature.…”

Section: Writing Strategiesmentioning

confidence: 99%

Writing strategy and electron-beam system with an arbitrarily shaped beam

Babin

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inFacile fabrication of high-resolution extreme ultraviolet interference lithography grating masks using footing strategy during electron beam writing J. Vac. Sci. Technol. B 31, 06F602 (2013); 10.1116/1.4822016Variable cell projection as an advance in electron-beam cell projection system Development of an electron-beam lithography system for high accuracy masks Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam systemThe greatly increased complexity of modern masks has in turn led to increased write times and cost of the masks. Any opportunity to decrease write time while providing the required accuracy of the fabricated pattern is highly beneficial. A writing strategy using an arbitrarily shaped beam (ASB) results in a considerably smaller number of flashes to write a complex pattern compared to other strategies. The design of an ASB system is proposed. The ASB electron-beam column is similar to that of a variable-shaped beam system, except for a modified beam-shaping block. This suggests the relatively easy integration of an ASB column. The throughput of an ASB system is higher than the throughput of other systems, except for patterns with low coverage or simple geometries. In addition to the throughput advantages, an ASB system enables higher accuracy, including the feasibility of writing features according to "ideal" optical proximity correction.

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“…1) At the Mask Writing Equipment Technology Research Laboratory of the project, we are developing an electron beam exposure system by introducing concepts of multi column cells (MCC) 2) and character projection (CP). 3), 4) We have assembled an electron beam system made up of four column cells for the proof-of-concept of MCC with CP technology. 5), 6), 7) In this paper, we show some exposure results for the evaluation of resolutions and accuracies of the system.…”

Section: Introductionmentioning

confidence: 99%

Exposure results with four column cells in multicolumn EB exposure system

2009

Self Cite

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In the Mask D2I project at ASET, the authors assembled an electron beam exposure system to prove the concept ofmulti column cell with character projection technology. They performed beam calibrations in individual column cells to evaluate the resolution capabilities and stitching accuracies of the deflection fields of the system. Isolated 35nm line pattern and 60nm 1:1 line-and-space pattern were exposed in each column cell. Present stitching errors among the deflection fields were less than 15nm. We also evaluated stitching errors of patterns exposed by the different column cells. The stitching errors among the column cells were estimated to be less than 20nm. We are now investigating the origins of these errors to improve the exposure accuracies of the multi column cell system.

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Correcting deviations in the shape of projected images in the electron beam block exposure column

Cited by 11 publications

References 8 publications

Transitioning of direct e-beam write technology from research and development into production flow

Transitioning of direct e-beam write technology from research and development into production flow

Writing strategy and electron-beam system with an arbitrarily shaped beam

Exposure results with four column cells in multicolumn EB exposure system

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