Correction: “Properties of Si[sub x]O[sub y]N[sub z] Films on Si,” [J. Electrochem. Soc., 115, 311 (1968)]

Abstract

750~in Fig. 7. As is evident, the deposition rate is practically independent of the total flow rate. This is also indicative of a kinetically controlled process. This experiment was repeated for the B type orientations with similar results.Flow rate independence is a necessary but insufficient condition for elimination of diffusion controlled processes since it could be due to peculiar flow conditions such as poor mixing at high flows (7). However, all available evidence is consistent with the concept of a kinetically controlled deposition process in the region where the deposition rate increases with increasing substrate temperature. This evidence may be summarized as (i) a strong dependence of the deposition rate on the substrate orientation, (ii) rapidly increasing deposition rate with increasing substrate temperature, and (i~i) insensitivity of the deposition rate to the total gas flow rate.The rate behavior in high temperature region beyond the maximum may indicate a close approach to equilibrium. Within experimental error the high temperature regions of the curves approximate the shape of the equilibrium curve (Fig. 6) in this region. However, the decreasing rate at high temperatures could also be due to an activated etching process whose rate increases with increasing temperature and becomes the dominant process at temperatures above 8O0~ The fact that the {lll}B rate was found to be low and relatively constant over the entire temperature range remains unexplained. One possibility is that an impurity is selectively adsorbed at the critical growth sites on the {lll}B surface. Perhaps the answer may be found by a study of the effects of gas composition on epitaxial growth. This study is now in progress.The variation of the deposition rates as a function of the substrate orientation is interesting. The high {lll}A deposition rates attest to the ease of arsenic addition to the growing surface. For an ideal {lll}A surface, an incoming arsenic makes fewer surface bonds than with any other orientation. However, this same {lll}A surface has the greatest deposition rate for the reactant gas composition used in this study. The decrease in polarity effects is also obvious in this series as the surface deviates by greater amounts from a {111} toward the nearest {10O}. Thus the differences between the A and B surfaces at 750~ were {111} = 85 ~/hr, {112} = 43 ~/hr, and {113} ----3 /~/hr. This trend confirms the earlier results which indicated no significant polarity effects for the {115} orientation. The increase in deposition rate in the vicinity of the {l13}B orientation on the curve shown in Fig. 5 offers support for Sangster's theoretical predictions (3). Thus {113} is a favorable orientation for crystal growth since it tends to combine the good nucleation characteristics of a {1OO} with the favorable surface packing and stoichiometry of the {111}. Further clarification of the effects of orientation and surface polarity must await completion of the study concerning the effects of vapor composition on the deposition...

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

“…In this regard, a-SiO 2 is an ideal metal interconnect dielectric with leakage currents typically <10 −8 A/cm 2 (up to 6-8 MV/cm) [93][94][95] and dielectric breakdown strengths of ≥ 10 MV/cm. [96][97][98] Another dielectric that also exhibits excellent electrical insulating properties is a-Si 3 N 4 with leakage currents of <10 −8 A/cm 2 (up to 4-6 MV/cm) 41,99,100 and dielectric breakdown strengths of 6-8 MV/cm.…”

Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2∕Si interface

“…On the other hand, it has been reported that the barrier heights decrease with nitrogen concentration in oxynitrides. 1,9,15 Although the barrier heights are known to be dependent on the nitrogen concentration, the electron effective mass is still assumed to be a constant ͑0.5m e ͒ in the modeling of tunneling current for high nitrogen concentrations. 1 Obviously such an assumption needs to be justified.…”

Photoemission studies of very thin (<10 nm) silicon oxynitride (SiO N ) layers formed by PECVD

“…The main reason therefore is the larger dielectric constant ε of oxynitrides. In fact ε increases from a value of 3.9 for SiO 2 (SiO 2 N 0 ) to 7.8 for Si 3 N 4 (SiO 0 N 1.33 ) almost linear with the nitrogen content in the oxynitride [1]. But also the diffusion suppressing properties of oxynitrides are of interest.…”