Correlated Model for Wafer Warpage Prediction of Arbitrarily Patterned Films

Ostrowicki, Gregory T.; Gurrum, Siva P.; Nangia, Amit

doi:10.1109/ectc.2018.00317

Cited by 10 publications

(12 citation statements)

References 2 publications

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“…Two analytical approaches aimed to predict stress and warpage are described in this section. Stoney's equation [22,27,28] are commonly used as reference. This formula is developed for "membrane-like" geometries made by two materials, such as the system made by semiconductor wafer and ECD metal, in which one layer (in our case, ECD Cu) is much thinner than other.…”

Section: Model For Warpage Calculation 41 Literature Analytical Approachesmentioning

confidence: 99%

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

et al. 2021

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Electrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional materials, such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (20 μm) copper layer. Warpage is experimentally characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. Physical analysis is employed to correlated the macroscopic warpage behavior with microstructure modification. A linear Finite Element Model (FEM) is developed to predict the geometrically stress-curvature relation, comparing results with analytical models.

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Section: Model For Warpage Calculation 41 Literature Analytical Approachesmentioning

confidence: 99%

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

et al. 2021

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“…Подробное изучение процесса коробления пластин вызвано растущими требованиями к характеристикам структур и потребностью обеспечения достаточной для их функционирования прочности. Неравномерные напряжение и деформации, существенное влияние способа и области крепления пластин, влияние гравитации [3]становится гораздо более выраженными для пластин диаметром 300 mm [4], для утоненных пластин [5], в том числе при создании сборок пластин [6]. Отдельно следует отметить, что при уменьшении толщины пластин начинает наблюдаться ассиметричный (цилиндрический, седловидный) изгиб [4,7,8], этот процесс в настоящее время слабо изучен.…”

Section: Introductionunclassified

“…Неравномерные напряжение и деформации, существенное влияние способа и области крепления пластин, влияние гравитации [3]становится гораздо более выраженными для пластин диаметром 300 mm [4], для утоненных пластин [5], в том числе при создании сборок пластин [6]. Отдельно следует отметить, что при уменьшении толщины пластин начинает наблюдаться ассиметричный (цилиндрический, седловидный) изгиб [4,7,8], этот процесс в настоящее время слабо изучен. Для уменьшения коробления пластин может быть использована термообработка, нанесение пленки на обратную сторону пластины [7], формирование компенсирующих структур на обратной стороне пластины [7], управление толщиной и механическими напряжениями слоев и др.…”

Section: Introductionunclassified

Методика Исследования Изменения Формы Пластин И Тонкопленочных Мембран С Использованием Геоморфометрических Подходов

Dedkova¹,

Флоринский²,

Дюжев³

2022

Журнал Технической Физики

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We discuss a technique for investigating changes in complex topography and shape of structures using geomorphometric methods to study surfaces of wafers and membranes formed by the Bosch process. The wafers were analyzed before and after the deposition of the SiO2 layer. The membranes were analyzed during the bulge testing. The study was carried out using maps of the catchment area and principal curvatures taking into account artifacts of the approximation of experimental data. We found a correspondence between the distribution of lines connecting the highest surface areas before and after the deposition of the SiO2 layer on the wafers. For membranes with structure: Al (0.8 μm)/SiO2 (0.6 μm)/Al (1.1 μm), pSi*(0.8 μm)/SiNx (0.13 μm)/SiO2, Al (0.6 μm) – we also found that features of membrane boundaries are mainly caused by their initial shape rather than change under the action of an applied pressure. The advantages of geomorphometry methods for studying changes in the shape of wafers and thin-film membranes in technological processes for the manufacturing of microelectronic devices are shown in comparison with traditional methods for analyzing surface topography maps.

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“…Furthermore, it is known that wafer warpage is one of the main root causes leading to a die failure (i.e., defect) in semiconductor manufacturing 26 . As the thickness of the wafer decreases and large stresses are induced during manufacturing processes such as film deposition, CMP, lithography, etch, and various thermal processes, an increasing trend of wafer warpage has been seen 27,28 . In the past few years, several patterned wafer geometry (PWG) metrology tools have been employed to measure wafer distortion 29,30 .…”

Section: Introductionmentioning

confidence: 99%

“…26 As the thickness of the wafer decreases and large stresses are induced during manufacturing processes such as film deposition, CMP, lithography, etch, and various thermal processes, an increasing trend of wafer warpage has been seen. 27,28 In the past few years, several patterned wafer geometry (PWG) metrology tools have been employed to measure wafer distortion. 29,30 Thus, in this research, we consider semiconductor wafer defect bin data combined with wafer warpage information and propose a novel hybrid resampling technique to improve the performance of wafer defect bin classifiers.…”

Section: Introductionmentioning

confidence: 99%

A novel hybrid resampling for semiconductor wafer defect bin classification

Park

Pan

Montgomery

2022

Quality & Reliability Eng

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Generally, defective dies on semiconductor wafer maps tend to form spatial clusters in distinguishable patterns which contain crucial information on specific problems of equipment or process, thus it is highly important to identify and classify diverse defect patterns accurately. However, in practice, there exists a serious class imbalance problem, that is, the number of the defective dies on semiconductor wafer maps is usually much smaller than that of the non-defective dies. In various machine learning applications, a typical classification algorithm is, however, developed under the assumption that the number of instances for each class is nearly balanced. If the conventional classification algorithm is applied to a class imbalanced dataset, it may lead to incorrect classification results and degrade the reliability of the classification algorithm. In this research, we consider the semiconductor wafer defect bin data combined with wafer warpage information and propose a new hybrid resampling algorithm to improve performance of classifiers. From the experimental analysis, we show that the proposed algorithm provides better classification performance compared to other data preprocessing methods regardless of classification models.

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Correlated Model for Wafer Warpage Prediction of Arbitrarily Patterned Films

Cited by 10 publications

References 2 publications

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

Методика Исследования Изменения Формы Пластин И Тонкопленочных Мембран С Использованием Геоморфометрических Подходов

A novel hybrid resampling for semiconductor wafer defect bin classification

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