Correlation and Model for RF Performance (<I>f<SUB>T</SUB></I>) Variability Due to Random Dopant Fluctuation in Nanoscale MOSFETs

A 94-GHz Frequency Doubler in Nano-Scale CMOS Technology for <I>W</I>-Band Millimeter Wave Passive Imaging Systems

“…Various novel circuit designs in nano-scale CMOS technology have been reported either in low frequency analog domain or in high frequency millimeter domain. [1][2][3] Giving thanks to the improvement of f T /f max performance of nano-scale CMOS devices, integrated circuit and system design in the millimeter-wave (MMW) region from 30 to 300 GHz (1 cm to 1 mm) are becoming more and more popular due to the integration, cost and signal processing advantages of CMOS technology. 1 Frequency multipliers are fundamental building blocks in MMW communication systems in that frequency multipliers can generate high quality millimeter wave signal sources by multiplying signals from frequency synthesizers working at much lower frequency.…”

Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations

“…[2,4] Therefore, analysis and modeling of variations in these gate capacitances become an urgent task for predicting MOSFETs' behavior in the early design stage. [5,6] It has been reported that 𝐶 gg will vary drastically due to random dopant fluctuation (RDF) [7,8] in the MOSFET channel, which is regarded as one of the most important variation sources in current planar nanometer complementary metaloxide-semiconductor (CMOS) technology. However, it has not been understood yet how these transcapacitances interact with each other and how these trans-capacitance variations induced by RDF impact 𝐶 gg variability.…”

“…This is consistent with the results of the previous 3D 'atomistic' simulation studies. [4,7,8] In addition, the model curves at different channel widths (𝑊 eff ) and doping concentrations with simulation data on gate dependence are depicted in Fig. 6.…”