Correlation between background carrier concentration and x-ray linewidth for InGaAs/InP grown by vapor phase epitaxy

Abstract

The background carrier concentration of nominally undoped InGaAs/InP grown by the hydride process was found to correlate to the x-ray linewidth. A double crystal diffractometer was used to measure the mismatch parallel to the (100) surface as well as the more standard perpendicular mismatch. The epitaxial layers were, in general, found to be tetragonally distorted, and the linewidth was found to correlate to the parallel mismatch. Two regimes for the carrier concentration were identified, one for samples having no parallel mismatch and one for samples with parallel mismatch. In the latter case lattice defects which accommodated the misfit strain such as misfit dislocations are concluded to have been responsible for the carrier concentration.

High Resolution XRD Studies of Ion Beam Irradiated InGaAs/InP Multi Quantum Wells

“…It has been reported that nonequilibrium conditions achieved with Molecular Beam Epitaxy (MBE) generally lead to experimental critical thickness which are very much dependent on the growth conditions [2,3]. Macrander et.al [11] gave a correlation between the carrier concentration and the X-ray line widths for InGaAs/InP. Metal Organic Chemical Vapor Deposition (MOCVD) grown InGaAs/InP structures have also been studied using various characterization techniques to understand the mismatch strain on the bandgap [5].…”