Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors

Berencén, Yonder; Ramírez, J. M.; Jambois, O.; Domı́nguez, Carlos; Rodríguez, José Antonio; Garrido, B.

doi:10.1063/1.4742054

Cited by 19 publications

(10 citation statements)

References 15 publications

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“…A mean value around 0.3 eV and 0.1 eV for E A was obtained under low and high voltage polarization, respectively, in agreement with a previous work where similar films with bulk-limited conduction were studied. 15 Therefore, current transport takes place mainly along electrically tunable conductive channels under the silicon nitride conduction band (for electrons) and valence band (for holes). Fig.…”

Section: Resultsmentioning

confidence: 99%

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Ramírez

Cueff

Berencén

et al. 2014

Journal of Applied Physics

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International audienceErbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er3+ ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%

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Section: Resultsmentioning

confidence: 99%

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Ramírez

Cueff

Berencén

et al. 2014

Journal of Applied Physics

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“…To verify the temperature dependence of retention characteristics, we assume trapped electrons are mainly emitted by a thermally assisted process, which is exponentially proportional to E a as τ ∝ exp( E a /kT). Accordingly, a longretention time is expected from the materials having appropriate deeplevel trap densities [13], [14].…”

Section: Methodsmentioning

confidence: 99%

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

Hong

Kim

et al. 2013

IEEE Electron Device Lett.

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In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, M , on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (∼2 μA) and good retention properties (< ∼10 4 s at 85°C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by M . Thus, the RS properties of the SiN films can be improved by engineering M without additional processes.Index Terms-Activation energy of traps, resistive random access memories (RRAM), resistive switching, silicon nitride, work function difference.

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“…4 A lower band gap matrix like Si 3 N 4 with smaller band offsets is expected to allow for better electrical transport, e.g., via minibands, 5 although many other factors also influence the QD-QD coupling. 6 In addition, Si 3 N 4 -embedded Si NCs were suggested for Si-based electroluminescent devices 7 and for the investigation of modulation doping mechanisms in nanoscale silicon. 8 Despite expected advantages from Si 3 N 4 as a matrix material for Si NCs, the fundamental origin of the luminescence from Si NC/Si 3 N 4 samples is still under debate.…”

Section: Introductionmentioning

confidence: 99%

Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

Hiller¹,

Zelenina²,

Gutsch³

et al. 2014

Journal of Applied Physics

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Superlattices of Si-rich silicon nitride and Si 3 N 4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si 3 N 4 . Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10 5 times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si 3 N 4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si 3 N 4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si 3 N 4 interface defect literature. In addition, the role of Si 3 N 4 valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si 3 N 4 -embedded Si NCs are suggested. V C 2014 AIP Publishing LLC. [http://dx.

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Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors

Cited by 19 publications

References 15 publications

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

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