Correlation Between Film Properties and Anhydrous HF Vapor Etching Behavior of Silicon Oxide Deposited by CVD Methods

On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface

“…All calculations were performed with the Vienna ab initio simulation package (VASP) . For analysis of electrostatic properties of the BTBAS molecule, we also performed DFT calculations using the same exchange-correlation functional but with a double numerical basis set augmented with polarization functions as implemented in the DMol package of Materials Studio 5.0. , …”

“…Properly manufactured SiO 2 thin layers exhibit excellent physical and chemical properties, such as optical transparency, chemical inertness, scratch resistance, and hardness . The films can be conventionally deposited on a selected substrate through a variety of techniques, such as chemical vapor deposition (CVD), , plasma-enhanced CVD (PECVD), − and so on. As the demand to decrease device sizes continues, the temperature range suitable for thin-film fabrications has become very narrow, and a low-temperature process for SiO 2 deposition is required to ensure excellent device integrity and performance. , Although PECVD can produce SiO 2 films at a relatively low temperature (<300 °C), the substrate could be damaged by the use of plasma, and the generated surface impurities could become detrimental to the film quality .…”

Thermal Atomic Layer Deposition of Device-Quality SiO2 Thin Films under 100 °C Using an Aminodisilane Precursor

“…The high-quality SiO 2 growth on Si substrates has conventionally been possible through thermal oxidation under high temperatures over 900 °C. Other conventional deposition techniques that have been developed for the formation of SiO 2 films include thermal chemical vapor deposition (CVD) and plasma-enhanced CVD. − However, such high temperatures and damage-inducing processes limit the versatility of SiO 2 , particularly for back-end interconnects and thermally delicate substrates with strict temperature constraints, such as polymers. Further, with the ongoing demand for complex and three-dimensional (3D) structures in advanced device architectures, there is a strong requirement for the deposition of ultrathin and conformal SiO 2 films .…”

First-Principles Study of a Full Cycle of Atomic Layer Deposition of SiO2Thin Films with Di(sec-butylamino)silane and Ozone

“…Low-temperature deposition of SiO 2 thin films on semiconductor devices has been in increasing demand as the number of new applications rises rapidly and the feature sizes continue the trend of shrinkage. , High optical transmittance, chemical inertness, scratch resistance, and hardness are among the essential attributes of these thin films . Conventional deposition techniques, such as chemical vapor deposition (CVD) , and plasma-enhanced chemical vapor deposition (PECVD), − have long been developed for dielectric layer fabrications. Unfortunately, the step coverage limitation of CVD at high temperature is bottleneck for its application in the future, especially for depositing the patterned film structures with high aspect ratios.…”