Correlation between Hall Mobility and Optical Mobility in Aluminum‐Doped ZnO Films via Boundary Scatterings and Estimation of Donor Compensation Ratio

Ghosh, Shuvaraj; Basak, Durga

doi:10.1002/pssb.201900682

Cited by 11 publications

(4 citation statements)

References 39 publications

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“…It can be seen that the most doped sample (50 cm of Al) resulted in the lowest crystallite size value and higher presence of concentrations of defects or vacancies, which can be related to the replacement of Zn 2+ with 0.73 Å by Al 3+ with 0.53 Å 30 . Other works in the literature with thicknesses similar to our work obtained resistivity in the range of 10 3 Ω cm 13,40 . In these works, the AZO films were first deposited using the r.f.…”

Section: Resultssupporting

confidence: 67%

“…30 Other works in the literature with thicknesses similar to our work obtained resistivity in the range of 10 3 Ω cm. 13,40 In these works, the AZO films were first deposited using the r.f. sputtering technique using Al 2 O 3 -doped ZnO ceramic targets deposited at different temperatures and then annealed after deposition.…”

Section: Study Of the Composition Of Azo Filmsmentioning

confidence: 99%

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Versatile r.f. magnetron sputtering doping method to produce aluminum‐doped zinc oxide films

de Oliveira,

Escote,

Nantes

et al. 2024

J Am Ceram Soc.

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Aluminum‐doped zinc oxide Al:ZnO (AZO) is a non‐toxic material applied as a transparent conductive oxide film. In this study, we report on the structural, optical, and electrical properties of AZO films obtained by thermally oxidizing aluminum‐doped Zn films produced by a versatile and low‐cost method of doping using the magnetron sputtering technique deposition. We use aluminum wire above the zinc target to produce Al:Zn films. The influence of r.f. power and different Al wire lengths on the AZO film properties were studied. The resulting AZO films exhibited Al concentrations of up to 2.85% and an optical gap between 3.22 and 3.29 eV. The transmittance was greater than 80% for all samples, and the electrical resistivity decreased by two orders of magnitude with Al doping. As a result, the sample with an aluminum concentration of approximately 1% had the lowest resistivity. In this work, it was possible to relate the lower resistivity with larger grain size and smaller concentrations of defects or vacancies.

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Section: Resultssupporting

confidence: 67%

Section: Study Of the Composition Of Azo Filmsmentioning

confidence: 99%

Versatile r.f. magnetron sputtering doping method to produce aluminum‐doped zinc oxide films

de Oliveira,

Escote,

Nantes

et al. 2024

J Am Ceram Soc.

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show abstract

“…Moreover, a shift toward the lower 2 θ value of the (002) peak was observed for Ti doping and became more prominent for higher Ti deposition power as shown in the inset of Figure 1c, which may be due to the generation of tensile strain. [ 43 ] No other peak for Ti or TiO 2 is detected, indicating the successful doping of Ti atoms into the hexagonal ZnO lattice by the co‐sputtering technique.…”

Section: Resultsmentioning

confidence: 99%

Ti‐Doped ZnO Thin Films‐Based Transparent Photovoltaic for High‐Performance Broadband and Wide‐Field‐of‐View Photocommunication Window

Ghosh,

Patel,

Kumar

et al. 2024

Solar RRL

Self Cite

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Transparent photovoltaics (TPVs) are crucial for developing next‐generation see‐through electronics. However, TPV devices (TPVDs) require wide‐bandgap materials that are typically only responsive to short wavelength (ultraviolet, UV) lights rather than visible lights. Is it possible to improve the TPV performance by harvesting the longer wavelength lights without degradation of transparency? It may be satisfied with the function of intermediate energy states, which can utilize the lower photon energy (longer wavelength light) by a two‐step transition. To achieve this, co‐sputtered Ti‐doped ZnO (Ti:ZnO) film‐based high‐performance TPVDs have been developed. Density functional theory analysis revealed the formation of intermediate energy states due to the hybridization of O 2p and Ti 3d orbitals in the Ti:ZnO system. The Ti:ZnO‐based TPVDs show 65% average visible transparency with a power production value of 655 μW cm−2. These devices exhibit good photodetection behavior under UV to visible illuminations with high responsivity and detectivity values of 1.85 A W−1 and 2.5 × 1013 Jones, respectively. Finally, a high‐performance UV to visible broadband and wide‐field‐of‐view photocommunication system is designed based on the TPVDs to generate the fast Morse code signal. Therefore, Ti doping in ZnO provides a good way to improve the device's functionality for futuristic applications.

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“…The reason why the lattice constant increases with increasing In doping concentration is the difference between the ionic radii of Zn 2+ (0.74 Å) and In 3+ (0.81 Å). [ 56,57 ] In addition, the strain value in the IZO films along the c ‐axis can be calculated by following formula [ 58 ]

ε_{z z} = (c - c_{0}) / c_{0} \times 100

where

ε_{z z}

is the strain value, c is the c ‐axis lattice constant, and c 0 is the strain‐free lattice parameter of ZnO (5.2066 Å). The positive strain represents the tensile strain when the IZO films are stretched, whereas the negative strain value represents the compressive strain when the IZO films are compressed.…”

Section: Resultsmentioning

confidence: 99%

Thermal Dissipation Annealing for Crystallization of In‐Doped ZnO Films Deposited on Polyethylene Naphthalate Substrate without Substrate Deformation

Kim

2021

Physica Status Solidi (a)

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High‐temperature annealing is essential to crystallize sol–gel spin‐coated ZnO films but is a critical disadvantage in manufacturing flexible and transparent electronics, owing to low thermal stability of polymer substrates. Thus, a novel annealing method, named thermal dissipation annealing (TDA), is developed. TDA method can anneal ZnO films without any deformation of polymer substrates. The effects of TDA method are confirmed by annealing ZnO films deposited on glass and polyethylene naphthalate substrates. Moreover, In‐doped ZnO (IZO) films are annealed by TDA method, and the properties of IZO films are investigated. ZnO films annealed by TDA method show graphene‐like nanosheets and exhibit much higher photosensitivity than ZnO films annealed by furnace or infrared (IR) lamp. For IZO films annealed by TDA method, entangled nanosheets begin to unravel with increasing doping concentration, and size of nanosheets significantly decreases at 0.04 at%. The photosensitivity of the IZO films decreases from 21.77 to 2.76 with increasing doping concentration. Therefore, flexible and transparent UV photodetectors based on sol–gel spin‐coated ZnO films can be fabricated through TDA method; however, when ZnO films annealed by TDA method are utilized to UV photodetectors, In dopant is not a suitable material to improve the performance of UV photodetectors.

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Correlation between Hall Mobility and Optical Mobility in Aluminum‐Doped ZnO Films via Boundary Scatterings and Estimation of Donor Compensation Ratio

Cited by 11 publications

References 39 publications

Versatile r.f. magnetron sputtering doping method to produce aluminum‐doped zinc oxide films

Versatile r.f. magnetron sputtering doping method to produce aluminum‐doped zinc oxide films

Ti‐Doped ZnO Thin Films‐Based Transparent Photovoltaic for High‐Performance Broadband and Wide‐Field‐of‐View Photocommunication Window

Thermal Dissipation Annealing for Crystallization of In‐Doped ZnO Films Deposited on Polyethylene Naphthalate Substrate without Substrate Deformation

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