Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

Taborda, Jaime Andrés Pérez; Landázuri, Henry Riascos; Londoño, Liliana Patricia Vera

doi:10.1109/jsen.2015.2466467

Cited by 34 publications

(13 citation statements)

References 24 publications

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“…In the same way, the N 1s spectrum was deconvoluted with two peaks as described in Figure 5 b. It showed one main peak centered at a BE of 397.4 eV, corresponds to N in Al–N, and the other at 398.6 eV, corresponds to the BE of unbounded nitrogen [ 43 ].…”

Section: Resultsmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.

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Section: Resultsmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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“…A decrease in the density of nitrogen vacancies is confirmed by the N 1s XPS spectra of the AlN passivation layers, as shown in Figure . The XPS signals were decomposed into the peaks corresponding to the lattice nitrogen (397 eV) and nitrogen vacancies (398.3 eV), respectively. , It can be seen that the amount of nitrogen vacancies in the AlN passivation layer treated by the ALB process is less than that prepared without the ALB treatment. The lower density of nitrogen vacancies is consistent with the higher film density due to atomic layer densification caused by the ALB treatment.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks

Wang

Chang

Yin

et al. 2020

ACS Appl. Electron. Mater.

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The impact of atomic layer bombardment (ALB) on the aluminum nitride (AlN) passivation layer between the HfO 2 gate dielectric and the n-type epitaxial germanium (Ge) was investigated. The ALB technique was performed with the layer-by-layer, in situ helium/argon plasma bombardment in each cycle of atomic layer deposition (ALD) of AlN. An increase in the film density and a decrease in nitrogen vacancies, as manifested by the X-ray reflection and X-ray spectroscopy, were observed in the AlN layer treated by the ALB process. The improvements in the AlN quality contribute to a reduction of the equivalent oxide thickness from 1.36 to 1.19 nm of the AlN/HfO 2 gate stack, together with the suppression of the gate leakage current, the interfacial state density, and the slow trap density. The reliability tests reveal promising reliability of the AlN/HfO 2 gate stack with a small flat-band voltage shift under the constant voltage stress and a high operation voltage of ∼2.4 V projected for a 10 years time-dependent-dielectricbreakdown lifetime. All of the results point that the ALB technique can effectively enhance the material/interface properties, electrical characteristics, and reliability of nanoscale devices, which is critical and beneficial to the next-generation high-speed and low-power nanoelectronics.

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“…The N 1s spectrum exhibited a peak at ≈397.5 eV which can be assigned to WN bonding. Moreover, we found another peak at ≈399.0 eV which could be contributed to nitrogen atoms near the nitrogen vacancies(Figure b) . To shed light on the local atomic arrangement and specific bonding modes of 2D h ‐W 2 N 3 nanosheets, synchrotron radiation X‐ray absorption fine structure (XAFS) measurements at the W L 3 ‐edge were performed.…”

Section: Exafs Curve‐fitting Resultsmentioning

confidence: 99%

Atmospheric‐Pressure Synthesis of 2D Nitrogen‐Rich Tungsten Nitride

Yang

et al. 2018

Advanced Materials

116

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increasing by the abundant WN bond. To the best of our knowledge, the experimental synthesis of 2D nitrogen-rich tungsten nitrides is not reported in literature because of the harsh synthesis condition, stemming from the sluggish reaction thermodynamics of penetrating nitrogen into tungsten lattice. [9] Overall, high pressure and temperature (P-T) synthetic method (5 GPa and 880-2570 K) was adopted to prepare various nitrogen-rich tungsten nitrides such as W 2 N 3 , W 3 N 4 . [10] However, this harsh synthesis condition is laborious to control the morphology of tungsten nitrides, especially for the 2D structure. [11][12][13][14] As an alternative strategy, ammoniating tungsten metals or compounds are extensively studied to produce tungsten nitrides. [9,15] Yet, the reaction is always incomplete, leading to low nitrogen ratio in final products with unreacted tungsten precursor (tungsten, tungsten oxides, etc.). [16] Consequently, developing a facile and real-world synthetic strategy, with favorable reaction thermodynamics and facile morphology control for 2D nitrogen-rich tungsten nitrides, is highly desired but still thought provoking.Herein, we synthesize atomically thin 2D nitrogen-rich hexagonal W 2 N 3 (h-W 2 N 3 ) nanosheets via salt-templated method at atmospheric pressure for the first time. In this strategy, h-W 2 N 3 2D transition metal nitrides, especially nitrogen-rich tungsten nitrides (W x N y , y > x), such as W 3 N 4 and W 2 N 3 , have a great potential for the hydrogen evolution reaction (HER) since the catalytic activity is largely enhanced by the abundant WN bonding. However, the rational synthesis of 2D nitrogen-rich tungsten nitrides is challenging due to the large formation energy of WN bonding. Herein, ultrathin 2D hexagonal-W 2 N 3 (h-W 2 N 3 ) flakes are synthesized at atmospheric pressure via a salt-templated method. The formation energy of h-W 2 N 3 can be dramatically decreased owing to the strong interaction and domain matching epitaxy between KCl and h-W 2 N 3 . 2D h-W 2 N 3 demonstrates an excellent catalytic activity for cathodic HER with an onset potential of −30.8 mV as well as an overpotential of −98.2 mV for 10 mA cm −2 . ElectrocatalysisThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.

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Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

Cited by 34 publications

References 24 publications

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks

Atmospheric‐Pressure Synthesis of 2D Nitrogen‐Rich Tungsten Nitride

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