Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact

Yu, K. M.; Cheung, S. K.; Sands, T.; Jaklevic, J.M.; Haller, E. E.

doi:10.1063/1.338205

Cited by 16 publications

(2 citation statements)

References 21 publications

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“…Lattice fringes of RhAs 2 were measured in contact with the GaAs substrate for columnar grains and spacings for RhGa were measured above these for equiaxed grains. These results of a layered structure of RhGa/RhAs 2 /GaAs are in keeping with RBS data from similar samples (12), RBS also shows Ga in the As layer. The lattice fringe images were taken on the < 110> GaAs pole indicating some orientation of the films with the substrate.…”

Section: Discussionsupporting

confidence: 77%

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A Tem Study of Rhodium on Gaas; Reactions and Morphology

Packer

Gronsky

1987

MRS Proc.

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Reaction between Rhodium films and n-type GaAs in the temperature range of 300° to 700°C has been examined using the TEM to look at the interface and phases present. The reaction between Rh and GaAs produces a layered structure of Rh/RhGa/RhAs2/GaAs based on RBS and TEM. Above 300°C, the RhGa phase has an orientation relationship of [011]RhGa // [100]GaAs. In cross-section, an interpenetrated layered structure was observed with equiaxed RhGa above columnar grains of RhAs2. Rhodium is the moving species as suggested by voids at the Rh/reacted layer interface. The interface between the reacted layer and GaAs was smooth at 450° and 20 minutes of annealing but showed 10 nm periodic penetrations when annealed at 400° for 90 minutes. Interface roughness may influence the low barrier height reported for the Rh Schottky diode annealed at 400°.

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Section: Discussionsupporting

confidence: 77%

“…R.ecently, the metallurgy of the M/GaAs interfaces of near noble and refractory metals have attracted attention (7)(8)(9)(10)(11)(12), due to advancements in compound semiconductor technology requiring new processing techniques for GaAs devices. Rutherford backscattering spectroscopy (RBS) and transmission electron.…”

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confidence: 99%

A Tem Study of Rhodium on Gaas; Reactions and Morphology

Packer

Gronsky

1987

MRS Proc.

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LCAO‐Calculations of the Valence Band Structure of Modified Polar Semiconductor Surfaces: Hydrogen‐, Copper‐, and Ruthenium‐Covered Gallium Arsenide (001)

Reichert

Jung

1991

Physica Status Solidi (b)

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Results of local density first principles LCAO calculations for a 13 layer slab of free and modified As-terminated (1 x 1) GaAs(001) surfaces are presented. The surfaces are covered by a monolayer of hydrogen, copper, or ruthenium. The surface calculation for the hydrogen covered surface gives hydrogen-induced and GaAs surface states in agreement with angle-resolved photoemission results within the energy range where they are found. For the systems GaAs(001):Cu and GaAs(001):Ru metal induced gap states are predicted with a density of 2 x 10'' crn-'. The calculated surface states indicate a higher Schottky barrier for the ruthenium than for the copper covered surface.Ergebnisse nichtempirischer LCAO-Berechnungen auf lokaler Dichtenaherung fur die Elektronenstruktur freier und modifizierter (1 x 1) GaAs(OOl)-Oberflachen werden vorgestellt. Die Oberflachen werden durch 13 Atomlagen dicke Slabs modelliert und sind mit einer kompletten Monolage Wasserstoff, Kupfer bzw. Ruthenium bedeckt. Fur die mit Wasserstoff bedeckte GaAs(001)-Oberflache stimmen die Ergebnisse gut mit experimentellen, aus winkelaufgeloster Photoemission stammenden Befunden uberein. Fur die Systeme GaAs(001): Cu und GaAs(001): Ru werden durch das Metall induzierte Gap-Zustande mit einer integrierten Zustandsdichte von 2 x lo'' cm-' erhalten. Die energetische Lage der berechneten Oberflachenzustande erklaren die hohere Schottkybarriere der Ru-bedeckten Oberflache gegenuber der Cu-bedeckten.

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