2015
DOI: 10.1063/1.4914002
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Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films

Abstract: The interplay of film stoichiometry and strain on the metal-insulator transition (MIT) and Hall coefficient of NdNiO3 films grown under different conditions is investigated. Unstrained lattice parameters and lattice mismatch strains are evaluated for films grown under a range of growth pressures and on different substrates. It is shown that both the temperature of the MIT and the Hall coefficient in the metallic phase are highly sensitive to film strain. In films grown with lower oxygen/total growth pressures,… Show more

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Cited by 63 publications
(73 citation statements)
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“…6,[12][13][14] 16 On the other hand, Hauser et al reported that the off-stoichiometry of the NNO films is effectively not affecting the temperature at which the MIT occurs but that, only the strain state needs to be considered. 17 These contradictory results suggest that there is a problem of reproducibility of the physical properties of NNO thin films that are generally grown via physical vapor deposition techniques onto similar templates.…”
Section: Introductionmentioning
confidence: 95%
“…6,[12][13][14] 16 On the other hand, Hauser et al reported that the off-stoichiometry of the NNO films is effectively not affecting the temperature at which the MIT occurs but that, only the strain state needs to be considered. 17 These contradictory results suggest that there is a problem of reproducibility of the physical properties of NNO thin films that are generally grown via physical vapor deposition techniques onto similar templates.…”
Section: Introductionmentioning
confidence: 95%
“…R NiO 3 thin films show inconsistent MIT characteristics, and can have different T MI even at the same lattice mismatch 6, 1720 . For example, NdNiO 3 (NNO) films grown on LaAlO 3 substrates have T MI ranging from 175 K to 0 K 6, 18, 20, 21 , which indicates the difficulty of synthesizing R NiO 3 that has the desired cation ratio ( R /Ni) and the degree of oxygen deficiency (δ). In the previous studies, oxygen deficiency in R NiO 3 epitaxial films has been controlled by varying p (O 2 ) during their growth 13, 15, 20 .…”
Section: Introductionmentioning
confidence: 99%
“…The microscopic origin of these phenomena is still intensely studied and various models of charge localization are being considered in light of a bond disproportionated insulating state observed in experiments [3][4][5][6][7][8][9][10]. Independently of the exact microscopic picture, it is clear that these materials are characterized by a delicate balance between lattice distortions, covalency, and electronic correlations [11][12][13][14][15]. This leads to a remarkable tunability of the MIT with chemical and static pressure, epitaxial strain, heterointerfaces, and even near-or midinfrared light excitation [16][17][18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%