Correlation of reduced oxygen content in precursors with improved MOVPE layer quality

Rushworth, S.; Smith, Lesley M.; Ravetz, M.S.; Coward, K.M.; Odedra, Rajesh; Kanjolia, Ravi; Bland, Stewart; Dimroth, Frank; Bett, Andreas W.

doi:10.1016/s0022-0248(02)01820-1

Cited by 10 publications

(7 citation statements)

References 6 publications

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“…By contrast at 650 1C, it falls to 9.071.0 Â 10 15 cm À3 . This latter figure is 10-100 times lower than that reported previously for the deposition of aluminum-containing alloys using either TBP or PH 3 [5][6][7][8][9][10][17][18][19][20][21][22]. Among these studies, Kondo et al [21] observed the lowest oxygen level in AlGaInP, equal to 2.0 Â 10 16 cm À3 .…”

Section: Shown Inmentioning

confidence: 75%

“…One of the main obstacles to the use of TBP and TBAs has been the presence of oxygen impurities in AlInP and AlInGaP at levels equal to or above 10 17 cm À3 [5][6][7][8][9][10]. Nevertheless, recent advancements in precursor purification may have overcome these drawbacks, suggesting that it is worthwhile to reexamine these sources for III/V MOVPE.…”

Section: Introductionmentioning

confidence: 99%

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Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

Chen

Cheng

Hicks

et al. 2004

Journal of Crystal Growth

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Section: Shown Inmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

Chen

Cheng

Hicks

et al. 2004

Journal of Crystal Growth

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“…[1][2][3][4][5][6][7] Oxygen forms a deep recombination level in III-V semiconductors and can increase the threshold current and reduce photoluminescence efficiency, minority-carrier lifetimes, and device reliability even at levels below 10 17 cm À3 . [1][2][3][4] The incorporation of oxygen in the growing film is more pronounced when the film contains highly reactive constituents such as aluminum. Therefore, it is important to identify and control critical oxygen-containing impurities in both Group III organometallic and Group V hydride gas precursors, especially when growing epitaxial films such as AlInP and AlGaInP.…”

Section: Introductionmentioning

confidence: 99%

Detection of Trace Water Vapor in High-Purity Phosphine Using Cavity Ring-Down Spectroscopy

et al. 2007

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The presence of trace water vapor in process gases such as phosphine, used for compound semiconductor epitaxial growth, can negatively affect the optical and electrical properties of the final device. Therefore, sensitive H2O measurement techniques are required to monitor precursor purity and detect unacceptable contamination levels. A commercial cavity ring-down spectrometer that monitors an H2O absorption line at a wavelength of 1392.53 nm was investigated for service in high purity PH3. Spectral parameters such as the line shape of water vapor in the presence of PH3 as well as background features due to PH3 were measured at different pressures and incorporated into the data analysis software for accurate moisture readings. Test concentrations generated with a diffusion vialbased H2O source and dilution manifold were used to verify instrument accuracy, sensitivity, linearity, and response time. H2O readings at 13.2 kPa corresponded well to added concentrations (slope=0.990+/-0.01) and were linear in the tested range (0-52.7 nmol mol-1). The analyzer was sensitive to changes in H2O concentration of 1.3 nmol mol-1 based on 3sigma of the calibration curve intercept for a weighted linear fit. Local PH3 absorption features that could not be distinguished from the H2O line were present in the purified PH3 spectra and resulted in an additional systematic uncertainty of 9.0 nmol mol-1. Equilibration to changing H2O levels at a flow rate of 80 std cm3 min-1 PH3 occurred in 10-30 minutes. The results indicate that cavity ring-down spectroscopy (CRDS) at 1392.53 nm may be useful for applications such as on-line monitoring (and dry-down) of phosphine gas delivery lines or the quality control of cylinder sources.

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“…However, in recent years, the oxygen content of the Al metal-organic precursor has been improved dramatically, and the oxygen content of metal organic vapor phase epitaxy (MOVPE)-grown Al x Ga 1Àx As-layers is below the secondary ion mass spectrometry (SIMS) detection limit. 12 Thus, we prepared two similar n-on-p Al 0.37 Ga 0.63 As homojunctions to investigate the influence of the inevitable DX-centers 7,13 on Al x Ga 1Àx As solar cell characteristics. The first sample was prepared as a 1 cm 2 solar cell that has a thick 920 nm emitter with a 1490 nm base, surrounded by a 100 nm Al 0.86 Ga 0.14 As front and a 60 nm Al 0.60 Ga 0.40 As back surface layer.…”

mentioning

confidence: 99%

AlxGa1−xAs minority carrier lifetime enhancement at low temperatures

Heckelmann¹,

David²,

Dimroth³

et al. 2013

Applied Physics Letters

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DX-centers in AlxGa1−xAs are known to reduce the minority carrier lifetime. Thus, DX-centers influence various semiconductor device characteristics. However, at temperatures below 100 K, we observed an unexpected improvement in the short circuit current density of an investigated Al0.37Ga0.63As solar cell. Using temperature-dependent capacitance measurements taken on a similar Al0.37Ga0.63As n−p+-diode, we correlated this behavior with the persistent photoconductivity effect. This effect derives from the suppressed silicon-DX-center generation inside the n-doped material at low temperatures.

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Correlation of reduced oxygen content in precursors with improved MOVPE layer quality

Cited by 10 publications

References 6 publications

Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

Detection of Trace Water Vapor in High-Purity Phosphine Using Cavity Ring-Down Spectroscopy

AlxGa1−xAs minority carrier lifetime enhancement at low temperatures

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