Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

Elshazly, Ezzat S.; Tepper, Gary

doi:10.1063/1.2967726

Cited by 24 publications

(15 citation statements)

References 13 publications

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“…The vapour phase growth technique offers an alternative to the traditional melt-growth methods with potential advantages over those techniques. For example, it is widely known that the high pressure Bridgman (HPB) method is prone to produce crystals with a high content of inclusions and precipitates (known as 'secondary phases'); whereas the vapour-phase technique appears not to suffer from the same problems [12,13]. Furthermore, vapour phase crystals can be grown without contact with the ampoule walls, significantly reducing stress during cooling down [14].…”

Section: Introductionmentioning

confidence: 99%

Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography

Egan

Choubey

Moore

et al. 2012

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography

Egan

Choubey

Moore

et al. 2012

Journal of Crystal Growth

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“…For these reasons it is important to estimate the quality of the CdTe material before starting the demanding processing into a radiation detector (described in [3]). Previous research shows that the amount of defects in CdTe as well as their sizes can play an important role in estimating the quality of the material and the performance of the detector [6][7][8]:…”

Section: Introductionmentioning

confidence: 99%

Employing infrared microscopy (IRM) in combination with a pre-trained neural network to visualise and analyse the defect distribution in Cadmium Telluride crystals

Kirschenmann,

Bharthuar,

Brücken

et al. 2021

Preprint

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While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a radiation detector is much more complicated. Additionally, large concentrations of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, vary from crystal to crystal and can reduce the spectroscopic performance of the processed detector. A quality assessment of the material prior to the complex fabrication process is therefore crucial. To locate the Te-defects, we scan the crystals with infrared microscopy (IRM) in different layers, obtaining a 3D view of the defect distribution. This provides us with important information on the defect density and locations of Te inclusions, and thus a handle to assess the quality of the material. For the classification of defects in the large amount of IRM image data, a convolutional neural network is employed. From the post-processed and analysed IRM data, 3D defect maps of the CdTe crystals are created, which make different patterns of defect agglomerations inside the crystals visible. In total, more than 100 crystals were scanned with the current IRM setup. In this paper, we compare two crystal batches, each consisting of 12 samples. We find significant differences in the defect distributions of the crystals.

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“…owing to their excellent photoelectric properties. However, it has been widely reported that the presence of Te‐rich SP particles and induced extended defects affect the structural uniformity and dominate the electrical properties of spectrometer‐grade CdZnTe (CZT) crystals . Actually, the energy resolution of CZT detectors is degraded by the non‐uniform charge collection efficiency (CCE), which is directly attributed to the electronic inhomogeneity.…”

Section: Introductionmentioning

confidence: 99%

Resolving electronic inhomogeneity in CdZnTe bulk crystal via scanning microwave impedance microscopy

Jia

et al. 2016

Phys. Status Solidi B

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Local electronic imaging using a scanning microwave impedance microscope (MIM) is performed on as‐grown CdZnTe bulk crystals at room temperature. Well‐defined Te‐rich secondary phase (SP) particles embedded in CdZnTe crystals are clearly observed in the MIM images. The high contrast observed via MIM is attributed to the discrepance between the dielectric response and conductivity of Te‐SP particles and the CdZnTe matrix. A homogeneous phase structure is found within Te‐SP particles according to the uniform MIM signal, which is further confirmed as the rhombohedral structure. The size effect of Te‐SP on the response microwave intensity is discussed. It is demonstrated that the MIM signal is essentially independent of the domain sizes for Te‐SP smaller than 10 µm. In contrast, for Te‐SP larger than 10 µm, a roughly linear size dependence of the signal amplitude appears. In addition, the local area surrounding Te‐SP is examined. A thin transition layer is observed surrounding the inclusion and is ascribed to Zn micro‐segregation. For some Te‐SP particles, a wide dark region surrounds the particle and is attributed to a high concentration of extended defects. For this Te‐SP induced higher defect region, the microwave response is lower owing to the high electron relaxation polarization. Schematic diagram depicting the scanning microwave impedance microscope (MIM) configuration.

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Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

Cited by 24 publications

References 13 publications

Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography

Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography

Employing infrared microscopy (IRM) in combination with a pre-trained neural network to visualise and analyse the defect distribution in Cadmium Telluride crystals

Resolving electronic inhomogeneity in CdZnTe bulk crystal via scanning microwave impedance microscopy

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