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Carrier lifetimes and tellurium inclusion densities in detector grade cadmium zinc telluride crystals grown by the high pressure Bridgman method were optically measured using pulsed laser microwave cavity perturbation and infrared microscopy. Excess carriers were produced in the material using a pulsed laser with a wavelength of 1064 nm and pulse width of 7 ns, and the electronic decay was measured at room temperature. Spatial mapping of lifetimes and defect densities in cadmium zinc telluride was performed to determine the relationship between tellurium defect density and trapping. A strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time.

Nanocrystalline tetragonal zirconia is co mmercially very significant material which finds extensive use as an anode material in SOFCs, as a catalyst oxygen sensor and structural material. Nanocrystalline zirconia powders for high performance anode of SOFCs have been synthesized by co-precipitation route. This technique is very helpful for the promotion of the stabilization of tetragonal phase of ZrO 2 in nano level at moderate temperature. The main objective of this paper is to stabilize the t-ZrO 2 through precipitation route using NH 4 OH solution. The processing features and the microstructural characteristics of NiO-ZrO 2 have been investigated by DSC-TG, XRD, SEM, and IR spectroscopy.The concentration of n ickel-salt plays an important role for the enhancement of stabilized tetragonal phase at moderate temperature. Fro m XRD results it was found that the t-ZrO 2 was more stabilized with 20 mo l% n ickel-salt concentration compared with 40 mol% Ni-salt at the same temperature.

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