Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

Heinemann, B.; Knoll, D.; Barth, R.; Bolze, D.; Blum, K.; Drews, Jürgen; Ehwald, K.‐E.; Fischer, G.; Kopke, K.; Krüger, D.; Kurps, R.; Rücker, H.; Schley, P.; Winkler, Wolfgang; Wulf, H.-E.

doi:10.1109/iedm.2001.979509

Cited by 10 publications

(3 citation statements)

References 4 publications

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“…The high-speed, low-voltage HBT type of this technology demonstrated f T /f max /BV CEo values of 75 GHz/90 GHz/2.4 V. Moreover, high-performance HBTs with f T /f max /BV CEo values of 100 GHz/130 GHz/2.5 V were fabricated in a five-mask level BiCMOS integration scheme [11]. The performance gain compared to the four-mask version was achieved by lateral shrinking and by optimizing the vertical doping profile, including a special collector implant.…”

Section: Introductionmentioning

confidence: 99%

“…Starting from the three high-performance BiCMOS processes [11][12][13] a technology family called SG25H was developed covering a wide range of needs for highperformance wireless and optical communication applications. This paper describes the architecture of the BiCMOS processes highlighting the modular scheme for the integration of the bipolar modules into a common CMOS platform.…”

Section: Introductionmentioning

confidence: 99%

“…HBT design issues associated with the implanted collector wells and the key set of electrical HBT parameters will be presented as well. For a more comprehensive overview on typical bipolar device characteristics, we refer to the original papers [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

Heinemann

Barth

Knoll

et al. 2006

Semicond. Sci. Technol.

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A 0.25 µm SiGe:C BiCMOS technology family (SG25H) with high-speed npn and pnp transistors for different performance requirements is presented. A CMOS-friendly integration scheme is realized by using collector wells, implanted after shallow trench formation, and avoiding deep trenches and extra collector sinkers. Three process variants are offered. The key bipolar transistor of the SG25H1 process is a 200 GHz npn device. The SG25H3 process offers three different types of npn HBTs. The performance ranges from f T /f max /BV CEo values of 110 GHz/180 GHz/2.3 V for the high-speed (HS) device to 50 GHz/140 GHz/4.5 V for the medium voltage (MV) device and 30 GHz/80 GHz/6.5 V for the high-voltage (HV) transistor. The SG25H2 process provides in addition to npn transistors similar to those of SG25H1 and H3 a very high-speed SiGe:C pnp HBT with f T /f max /BV CEo values of 90 GHz/120 GHz/2.8 V.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

Heinemann

Barth

Knoll

et al. 2006

Semicond. Sci. Technol.

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A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors

Knoll¹,

Heinemann²,

Barth³

et al.

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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We demonstrate a BiCMOS process which uses only 22 mask steps to fabricate four types of SiGe:C HBTs, in combination with a triple-well, 2.5V CMOS core and a full menu of passive elements. Key process feature is a 2-mask HBT module. We show that transistors with peak fT values ranging from 3OGHz (@ 7V BV, , ) up to 130GHz (@ 2.1V BVczo) can he fabricated with this low-cost module. Among the passives are varactors, polysilicon resistors, and a 2fF/pmz MIMsapacitor. Five layers of AI are available, including 2pm and 3pm thick upper layers. SOC ability of the process is demonstrated by a 1M-SRAM yield of typically 70%.

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Scaling of SiGe Heterojunction Bipolar Transistors

et al. 2005

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Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

Cited by 10 publications

References 4 publications

High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors

Scaling of SiGe Heterojunction Bipolar Transistors

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