High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

Abstract

A 0.25 µm SiGe:C BiCMOS technology family (SG25H) with high-speed npn and pnp transistors for different performance requirements is presented. A CMOS-friendly integration scheme is realized by using collector wells, implanted after shallow trench formation, and avoiding deep trenches and extra collector sinkers. Three process variants are offered. The key bipolar transistor of the SG25H1 process is a 200 GHz npn device. The SG25H3 process offers three different types of npn HBTs. The performance ranges from f T /f max /BV CEo values of 110 GHz/180 GHz/2.3 V for the high-speed (HS) device to 50 GHz/140 GHz/4.5 V for the medium voltage (MV) device and 30 GHz/80 GHz/6.5 V for the high-voltage (HV) transistor. The SG25H2 process provides in addition to npn transistors similar to those of SG25H1 and H3 a very high-speed SiGe:C pnp HBT with f T /f max /BV CEo values of 90 GHz/120 GHz/2.8 V.

SiGe HBT featuring fT > 600GHz at Cryogenic Temperature

“…Nevertheless the onset of the Kirk effect is delayed to higher current density and collector resistance is reduced. Previous publications (12,13) have already shown the influence of the collector lateral design on these electrical parameters. Compared to T2 A , the delay τ X of T2 B is reduced from 0.36 to 0.24 ps at 294 K and from 0.24 to 0.16 ps at 40-35 K. A similar reduction is observed for T1.…”

(Invited) SiGe BiCMOS for Optoelectronics

“…SiGe HBTs. The photonic BiCMOS process whose flow is shown in figure 2 was originally developed under use of the HBT modules H1 and H3 (9). Module H1 offers npn devices with transit (f T ) and maximum oscillation frequencies (f max ) up to 200GHz and a breakdown voltage (BV CEO ) of 1.9V, while H3 provides, additionally to a lowvoltage HBT (with lower f T compared to H1), also transistors with higher breakdown voltages.…”

Investigation of Disilane-Based SiGe-HBT Layers for Low External Base Resistances

“…3) of the silane-based SiGe layer. The previously described processes were applied in IHP's standard SG25H1 technology [7]. The overall performance of the SiGe-HBT depends of course on several other aspects like base-emitter and base-collector capacitances and the influence of changing one parasitic component has to be carefully evaluated.…”