2023
DOI: 10.1002/aelm.202201184
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Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

Abstract: High‐performance bilayer In2O3/IGZO thin‐film transistors (TFTs) fabricated by pulsed laser deposition are reported. The TFTs exhibit an on/off current ratio of 109, a reversed subthreshold slope (ss) of 0.08 V dec−1, and a high saturation mobility of 47.9 cm2 V−1 s−1. The reliability of the mobility values is critically validated and assessed by four‐probe measurements, the transfer‐length method, and the temperature‐dependence. X‐ray photoelectron spectra are combined with C–V measurements to characterize th… Show more

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Cited by 18 publications
(4 citation statements)
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“…As we all know, the IZO layer for high mobility has a lower resistance than the IGZO layer. The dual active layer of IZO/GIZO reduced the mobility of IZO, and both IZO and IGZO acted as conductive channels, resulting in a decrease in the overall mobility of the device [36][37][38]. Next, negative bias instability (NBS, V GS-stre = 30 V, and V DS = 10 V) under illumination at 250 lux of the heterojunction devices was tested.…”
Section: Resultsmentioning
confidence: 99%
“…As we all know, the IZO layer for high mobility has a lower resistance than the IGZO layer. The dual active layer of IZO/GIZO reduced the mobility of IZO, and both IZO and IGZO acted as conductive channels, resulting in a decrease in the overall mobility of the device [36][37][38]. Next, negative bias instability (NBS, V GS-stre = 30 V, and V DS = 10 V) under illumination at 250 lux of the heterojunction devices was tested.…”
Section: Resultsmentioning
confidence: 99%
“…Recently, oxide TFTs with stacked-layer channels have been extensively investigated to improve mobility and bias stability by combining two single oxide active layers [11]. Bilayer oxide TFTs based on In 2 O 3 /InGaO [12], In 2 O 3 /ZnO [13], and In 2 O 3 /IGZO [14,15] have been recently reported. The significantly improved electrical properties have been described as the contribution of the electron gas system at the interface of two active layers [14,16,17].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, in recent investigations, the emphasis has been on utilizing the defect states of oxide semiconductors, such as oxygen vacancies, to widen the detection range from UV to visible range [23][24][25][26]. Numerous methods such as doping, mechanochemical treatments, and forming a heterostructure with metal oxides have been studied to enhance visible-light photoresponse capability [26][27][28].…”
Section: Introductionmentioning
confidence: 99%