Critical dimension control in optical lithography

Postnikov, Sergei V.; Hector, Scott Daniel; Garza, César M.; Peters, Richard D.; Ivin, Vladimir

doi:10.1016/s0167-9317(03)00334-4

Cited by 17 publications

(4 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Monte Carlo latent image simulation was used for an estimation of the CD control in the resist. 6,7 The CD distribution was calculated based on 500 simulation runs in each case. The main CD error sources assumed in Monte Carlo simulation were focus, dose and mask errors.…”

Section: Simulation Assumptionsmentioning

confidence: 99%

Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Postnikov¹,

Robert

Thony

et al. 2005

Optical Microlithography XVIII

View full text Add to dashboard Cite

The merits of complementary double dipole illumination using 193 nm exposure wavelength with water immersion for 45 nm and 32 nm nodes is investigated. Off-axis dipole illumination shows a significant improvement in the resolution for lines and spaces oriented along the direction perpendicular to the dipole orientation. However, there is also a significant loss of resolution along the dipole direction. Consequently, two dimensional circuit patterning requires a double exposure to improve the resolution in both directions. Thus, the original layout must be decomposed into two masks: one containing the features to be primarily imaged with one dipole and another one with features to be imaged in the complementary direction. The horizontal and vertical lines must be selected and protective patches are required on each mask to protect the pattern formed by the complementary exposure. The potential capability of the dipole illumination used in conjunction with the immersion lithography for 45 nm and 32 nm nodes will be described. The Mentor Graphic approach based on the model assisted decomposition for the Double Dipole Lithography (DDL) was applied to the small clips of the 2D layout of the gate level for random logic. The lithographic process window and the CD control will be estimated through simulation.

show abstract

Section: Simulation Assumptionsmentioning

confidence: 99%

Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Postnikov¹,

Robert

Thony

et al. 2005

Optical Microlithography XVIII

View full text Add to dashboard Cite

show abstract

“…Using this approach, a total CD control value is predicted using Monte Carlo simulation. Postnikov et al 2 and Lucas et al 3 have recently described these methods, but such analysis is not new. 4 …”

Section: Error Budget Analysis For CD Controlmentioning

confidence: 99%

Evaluation of the critical dimension control requirements in the ITRS using statistical simulation and error budgets

2004

View full text Add to dashboard Cite

To evaluate the ability to achieve the CD control requirements listed in the International Technology Roadmap for Semiconductors (ITRS) and to set error budget targets for focus, dose, PEB temperature uniformity, and mask CD control, statistical lithography simulation was used. A statistical model of total CD control, including the effects of intrafield and interfield error sources, was developed. The exposure tool settings such as wavelength, NA and partial coherence, focus and dose error budgets, lens aberration levels, mask type and pattern pitch values were determined for each node. Monte Carlo simulation was used to predict the CD error due to intrafield dose and focus errors. The contribution to CD error due to the mask was determined using mask CD control values in the ITRS and a calculated MEEF value at various defocus settings. The contribution to CD error due to PEB temperature variations, across wafer dose variations, and variation of aberrations and flare within the exposure field was also simulated. To meet ITRS CD control targets for 130-nm and 90-nm nodes, an alternating PSM mask is required along with a larger CD printed in resist than indicated in the ITRS. Meeting ITRS CD control requirements for 65-nm node and beyond not possible using assumptions detailed here, even with a near ideal APSM. The simulations predicted that if a relaxed pitch and a larger CD in resist were used at the 32nm node, 193nm immersion lithography in combination with a nearly ideal alternating PSM might provide CD control that is comparable to that obtainable using extreme ultraviolet lithography (EUVL).

show abstract

“…Microelectronics and high-density data storage media require patterned templates with a high resolution and well-controlled widths of the critical features, which are defined in terms of the critical dimensions (CD). [1][2][3][4][5][6][7][8][9][10][11][12] High resolution and well-controlled CD, however, are two competing attributes of patterned templates and improvements in one often come at the sacrifice of the other. Herein we describe a method for narrowing the block copolymer domain width distribution and achieving block copolymer patterns with both high resolution and wellcontrolled CD.…”

Section: Introductionmentioning

confidence: 99%

Improved block copolymer domain dispersity on chemical patterns via homopolymer-blending and molecular transfer printing

Liu

Nealey

2017

Polymer

View full text Add to dashboard Cite

Critical dimension control in optical lithography

Cited by 17 publications

References 6 publications

Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Evaluation of the critical dimension control requirements in the ITRS using statistical simulation and error budgets

Improved block copolymer domain dispersity on chemical patterns via homopolymer-blending and molecular transfer printing

Contact Info

Product

Resources

About