Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

Fekecs, A.; Chicoine, M.; Ilahi, Bouraoui; SpringThorpe, A. J.; Schiettekatte, F.; Morris, Denis; Charette, Paul G.; Arès, Richard

doi:10.1016/j.nimb.2015.07.045

Cited by 4 publications

(3 citation statements)

References 25 publications

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“…An average concentration of 2.3 × 10 20 cm −2 Fe ions over the entire thickness of the InGaAs layer is obtained by summing all the implantation profiles. At such high doses, the InGaAs film is completely amorphized [11][12][13]. The ion-implanted films were then processed by RTA at five different temperatures: 300, 400, 500, 600 and 700 • C. The thermal annealing was performed under nitrogen atmosphere using GaAs proximity capping to prevent As desorption from the sample surface during annealing.…”

Section: Methodsmentioning

confidence: 99%

“…The presence of these peaks results from the formation of a polycrystalline phase of InGaAs after RTA. Indeed, the recrystallization of implanted films occurs through the formation of coherent crystalline domains (grains) [12,13]. The total broadening of each XRD peak can be expressed as β exp = β hkl + β ins , where β hkl is the full-width at half maximum of the hkl peak and β ins is the instrument's broadening function.…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…These findings paved the way to the development of thermally annealed Fe-ions implanted InGaAs(P) thin films [9,[11][12][13]. In previous work of our group, post-implantation rapid thermal annealing (RTA) was achieved to induce solid phase recrystallization in the film: this recrystallization was shown to improve the photocarriers mobility while preserving up to a certain extent the film resistivity and its ultrafast response [12,14].…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast photocarrier dynamics in Fe-implanted InGaAs polycrystalline photoconductive materials

Fandio¹,

Ilahi²,

Dion³

et al. 2021

J. Phys.: Condens. Matter

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We investigate the ultrafast photoconductivity and charge-carrier transport in thermally annealed Fe-implanted InGaAs/InP films using time-resolved terahertz spectroscopy. The samples were fabricated from crystalline InGaAs films amorphized with Fe ions implantation. The rapid thermal annealing of the InGaAs layer induces solid recrystallization through the formation of polycrystalline grains whose sizes are shown to increase with increasing annealing temperature within the 300-700 • C range. Based on the influence of the laser fluence, the temporal profile of the time-resolved photoconductivity was reproduced using a system of rate equations that describe the photocarrier dynamics in terms of a capture/recombination mechanism. For annealing temperatures below 500 • C, the capture time is found to be less than 1 ps while the recombination time from the charged states did not exceed 5 ps. However, for higher annealing temperatures, the capture and the recombination times show a continuous increase, reaching 7.1 ps and 1 ns respectively, for the film annealed at 700 • C. Frequency-dependent photoconductivity curves are analyzed via a modified Drude-Smith model that considers a diffusive restoring current and the confining particles' sizes. Our results demonstrate that the localization parameter of the photocarrier transport model is correlated to the polycrystalline grain size. We also show that a relatively high effective mobility of about 2570 cm 2 V −1 s −1 is preserved in all these Fe-implanted InGaAs films.

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Section: Methodsmentioning

confidence: 99%

Section: X-ray Diffractionmentioning

confidence: 99%