Crosslinking positive resist for deep UV photolithography and its application to LSI fabrication processes

Yamashita, Yoshio; Ogura, K.; Kunishi, Mitsumasa; Kawazu, Ryuzi; Ohno, Seigo; Mizokami, Y.

doi:10.1116/1.570335

Cited by 8 publications

(2 citation statements)

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“…New positive and negative deep u.v. resists (53)(54)(55)(56)(57)(58)(59)(60)(61) offer the potential for deep u.v. patterning of both imaging and planarizing layers in the same threelayer system.…”

Section: Discussionmentioning

confidence: 99%

A Three‐Layer Resist System for Deep U.V. and RIE Microlithography on Nonplanar Surfaces

Bassous

Ephrath

Pepper

et al. 1983

J. Electrochem. Soc.

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The three‐layer resist system AZ1350J/Si/PMMA was used to define high‐resolution patterns on nonplanar surfaces with topographical features typically encountered in the fabrication of VLSI circuits. The substrate was coated successively with a thick layer of polymethyl methacrylate (PMMA) for planarization, a thin layer of amorphous silicon for masking, and a thin AZ1350J resist layer in which the optical or electron beam exposed pattern was defined. Transfer of the resist image pattern into the amorphous silicon film was performed anisotropically by reactive ion etching (RIE) in a CF4 plasma. The pattern in the Si layer was then replicated in the underlying PMMA layer either by blanket deep u.v. exposure (200–300 nm) and solvent development or by in situ RIE in an O2 plasma. Both patterning techniques were comparable in defining submicrometer features in PMMA films 1–3 μm thick with good linewidth control and high aspect ratio over steps 1 μm high. Experimental details are described and the complexity of deep u.v. and RIE patterning techniques are discussed with particular emphasis on the planarizing characteristics of PMMA.

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Section: Discussionmentioning

confidence: 99%

A Three‐Layer Resist System for Deep U.V. and RIE Microlithography on Nonplanar Surfaces

Bassous

Ephrath

Pepper

et al. 1983

J. Electrochem. Soc.

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“…Deep (200-250 nm) u.v. photolithography is gaining a great deal of interest as a method of achieving small feature size (~1 ~m) with high aspect ratios (1)(2)(3)(4)(5)(6)(7). The reduction in exposure wavelength from 400 to 250 nm should reduce diffraction ef[ects and improve resolution (1).…”

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confidence: 99%

Preliminary Evaluation of Copolymers of Methyl Methacrylate and Acyloximino Methacrylate as Deep U.V. Resists

Wilkins¹,

Reichmanis²,

Chandross³

1980

J. Electrochem. Soc.

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Copolymers of methyl methacrylate and acyloximino methacrylate esters have been evaluated as deep u.v. (200–250 nm) resists. Poly (methyl methacrylate‐co‐3‐methacryloyl‐oximino‐2‐butanone) has been found to be ∼5 times faster than PMMA at λ>240 normalnm and capable of submicron resolution. It has been found that the acetyl group of the 3‐oximino‐2‐butanone substituent is more effective than the related species containing t‐butyl, phenyl, or benzoyl groups in promoting polymer degradation. The copolymers have also been exposed to 20 kV electron beam radiation and have been found to be about as sensitive as PMMA false(5×10−5C/cm2false) .

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Deep UV photolithographic systems and processes

Wilkins¹,

Reichmanis²,

Chandross³

et al. 1983

Polymer Engineering & Sci

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Deep UV[200 to 300 nanometers (nm)] photolithography has received much recent attention because it promises higher resolution than conventional exposure technology. Except for the change in wavelength from the 400 nm region, the exposure technology would remain virtually unchanged. We will discuss resist materials and processes explored in the last few years for optimization of deep UV lithography. Particular emphasis is placed upon the chemistry of resist design, multilevel processing schemes, and new sources for deep UV exposure.

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Crosslinking positive resist for deep UV photolithography and its application to LSI fabrication processes

Cited by 8 publications

References 0 publications

A Three‐Layer Resist System for Deep U.V. and RIE Microlithography on Nonplanar Surfaces

A Three‐Layer Resist System for Deep U.V. and RIE Microlithography on Nonplanar Surfaces

Preliminary Evaluation of Copolymers of Methyl Methacrylate and Acyloximino Methacrylate as Deep U.V. Resists

Deep UV photolithographic systems and processes

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