Crosstalk analysis in Carbon Nanotube interconnects and its impact on gate oxide reliability

Das, Debaprasad; Rahaman, Hafizur

doi:10.1109/asqed.2010.5548255

Cited by 18 publications

(20 citation statements)

References 17 publications

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“…21,32,34,35 Based on this theory, the coupling capacitance of MLGNR interconnect is assumed to be same as that of copper-based interconnect with same dimensions. 21,32,34,35 Based on this theory, the coupling capacitance of MLGNR interconnect is assumed to be same as that of copper-based interconnect with same dimensions.…”

Section: Temperature-dependent Impedance Analysismentioning

confidence: 99%

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

Circuit Theory & Apps

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The temperature-dependent circuit modeling and performance in terms of propagation delay, power dissipation, and crosstalk-induced voltage waveform at the far end of victim line of multilayer graphene nanoribbon (MLGNR) interconnects have been analyzed at 22 nm technology node. A comparative performance analysis between MLGNR interconnects with resistance estimated using temperature-dependent model and temperature-independent model is examined. The results obtained are also compared with capacitively coupled interconnects of copper (Cu). The results show that as the temperature is varied from 300 K to 500 K, MLGNR has lower propagation delay and power dissipation as compared to Cu for 1 mm long interconnects. It is also observed that because of the dominance of both low resistance and ground capacitance compared to Cu, MLGNR has better crosstalk-induced delay and voltage waveforms with rise in temperature at the far end of aggressor and victim line, respectively. Further, simulated results show an average relative improvement in propagation delay of 37.24% and corresponding improvement in power dissipation of approximately 19.59% by using a temperature-dependent model in comparison to a temperature-independent model of MLGNR resistance with interconnect lengths varying from 200 to 1000 μm. The reduction in the time duration of victim output pulse over these interconnect lengths also shows a significant improvement of approximately 35% by using temperature-dependent model as against temperature-independent model of MLGNR resistance.

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Section: Temperature-dependent Impedance Analysismentioning

confidence: 99%

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

Circuit Theory & Apps

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“…This section explored the effect of AR scaling on crosstalk effect. Test bench from [15] is used for simulation purpose.…”

Section: Cnt Interconnectsmentioning

confidence: 99%

Performance Analysis of Ultra Low-Power Mixed CNT Interconnects for Scaled Technology

Pable

Hasan

Kafeel

2011

2011 International Symposium on Electronic System Design

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Ultralow power-efficient VLSI circuits design received wide attention due to rapid growth of portable applications. The portable domain places inflexible constraint on the power consumption. Though, device operating in subthreshold region shows huge potential towards satisfying the ULP requirement, it holds lots of difficult design issues. As integration density of interconnects increases at every technology node, increased delay and crosstalk effects may becomes a more challenging design problem particularly for subthreshold interconnects. Nanometer subthreshold global interconnect faces subthreshold driver design challenges and problems due to increased interconnect capacitance. This paper examined and compared the effect of crosstalk on delay for mixed wall carbon nano tube and Cu interconnects. This work reports new aspect ratio for global interconnect to reduce the effect of crosstalk on interconnect performance under subthreshold conditions.

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“…With time such electric field weakens the oxide layer and possibility of its damage increases. The possibilities of oxide damage due to crosstalk overshoot and undershoot was studied by Das and Rahaman [49]. They observed that with scaling ratio of overshoot/undershoot voltages to power supply voltage does not vary with scaling in all types of interconnects.…”

Section: Cross Talk Between Cnt Interconnectsmentioning

confidence: 99%

Carbon Nanotube as a VLSI Interconnect

Rai¹,

Sarkar²

2011

Electronic Properties of Carbon Nanotubes

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Crosstalk analysis in Carbon Nanotube interconnects and its impact on gate oxide reliability

Cited by 18 publications

References 17 publications

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Performance Analysis of Ultra Low-Power Mixed CNT Interconnects for Scaled Technology

Carbon Nanotube as a VLSI Interconnect

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