2007 International Conference on Design &Amp; Technology of Integrated Systems in Nanoscale Era 2007
DOI: 10.1109/dtis.2007.4449511
|View full text |Cite
|
Sign up to set email alerts
|

Crosstalk and delay optimization techniques for nano scale interconnects

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
7
0

Year Published

2008
2008
2021
2021

Publication Types

Select...
3
2
1

Relationship

1
5

Authors

Journals

citations
Cited by 16 publications
(7 citation statements)
references
References 10 publications
0
7
0
Order By: Relevance
“…Transmission line models are more accurate than lumped models for modeling interconnect wires in deep submicron designs [4]. But as we are investigating local interconnects with wire lengths of a few micrometers, inductance effects are negligible.…”
Section: Interconnect Delay and Crosstalk Modelsmentioning
confidence: 99%
See 1 more Smart Citation
“…Transmission line models are more accurate than lumped models for modeling interconnect wires in deep submicron designs [4]. But as we are investigating local interconnects with wire lengths of a few micrometers, inductance effects are negligible.…”
Section: Interconnect Delay and Crosstalk Modelsmentioning
confidence: 99%
“…Coupling effects can cause interference between signals, referred to as crosstalk and may increase or decrease signal delay and as a result decrease signal integrity [2][3]. To analyze the coupling effects we need to model interconnects which require complete information of physical characteristic of the nets like the length of overlap or spacing between the nets [4]. The noise can also cause delay failure due to its effects on timing, increase power consumption due to glitches and change the logic level which cause functional failure [5][6].…”
Section: Introductionmentioning
confidence: 99%
“…Also, statistical alignment during assembly causes variations in field-effect regions as well as random variations from crosspoint to crosspoint in programmable diodes [14]. Due to the low controllability of the manufacturing process, the resistance of defectfree nanowires may vary as well as capacitance [15,16]. Variations in the length of nanowires cause resistive and inductive variations [16] whereas variations in nanowire width result in capacitive variations [15].…”
Section: Introductionmentioning
confidence: 98%
“…Due to the low controllability of the manufacturing process, the resistance of defectfree nanowires may vary as well as capacitance [15,16]. Variations in the length of nanowires cause resistive and inductive variations [16] whereas variations in nanowire width result in capacitive variations [15]. Crosspoints may have poor connections [8] which may result in variations of resistance.…”
Section: Introductionmentioning
confidence: 98%
See 1 more Smart Citation