Crucial role of interlayer distance for antiferromagnet-induced perpendicular magnetic anisotropy

Wang, Bo Yao; Lin, P. H.; Tsai, Ming-Shian; Shih, Chun-Wei; Lee, Meng-Ju; Huang, Chun-Wei; Jih, Nae-Yeou; Cheng, Po‐Jen; Wei, Der-Hsin

doi:10.1103/physrevb.92.214435

Cited by 16 publications

(8 citation statements)

References 47 publications

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“…In an independent study, Yamada et al repeated the same measurement on a system with Mn on top of Fe(001), but found the domain-wall width to be nearly independent of the Mn thickness [19]. Similar frustrated spin configurations have also been reported in other systems [8,9,[20][21][22][23][24][25][26][27][28][29][30]. The frustration induced domain wall in nanorings is considered to lead to potential logic and memory applications [31].…”

Section: Introductionmentioning

confidence: 72%

“…Indeed, surface defects of this type are practically unavoidable. Their presence at magnetically active interfaces often leads to nonnegligible magnetic frustration, resulting in complex spin textures [1][2][3][4][5][6][7][8][9]. This is especially true for most of the cases of practical relevance, where the exchange coupling across the AFM/FM interface is quite strong and is of primary importance for the understanding and design of various front-edge applications, such as magnetic storage, magnetic sensors, etc [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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General nature of the step-induced frustration at ferromagnetic/antiferromagnetic interfaces: topological origin and quantitative understanding

Chen

Sun

et al. 2019

New J. Phys.

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We present a study of the magnetic configuration due to step-induced magnetic frustration at ferromagnetic/antiferromagnetic (FM/AFM) interfaces. At a substrate monatomic step edge, a 180°d omain wall emerges. A physically appealing form for the thickness dependence of the domain wall width is obtained. It follows a universal behaviour in the whole thickness range, from ultrathin film to bulk and in both cases of an AFM domain wall on top of the FM layer and a FM domain wall on top of an AFM substrate. In the ultrathin limit of the capping layer, the domain wall grows linearly with the slope depending only on the ratio of the inter-layer and intra-layer Heisenberg exchange constants, regardless of the presence of magneto-crystalline anisotropy. These findings are in good agreement with previous experimental observations. As the thickness grows beyond the ultrathin regime, the corresponding thickness dependence departs from linearity and tends to its bulk value. The analytical insights are supported by conclusive numerical simulations of two independent varieties, namely, the Monte Carlo method which also includes the growth kinetics and the object oriented micromagnetic framework based micromagnetic simulations. While the quantitative details of the study are naturally dependent on the specific material parameters of the complex magnetic system, the global features of the spin texture in the capping layer are dictated by the topological step-edge defect. The latter in itself is quantifiable by a winding number of  . z J J J J DW 0 s d s d 4 4 2 2| This again proves that the domain wall width at the ultrathin limit is independent of the strength and type of magneto-crystalline anisotropy. -J J 5 10 Jm , s d 13 1 and =´-K 2.56 10 J m . 4 3 Figure 5(a) presents the comparison of the thickness dependent domain wall boundary for two-fold and four-fold magnetic anisotropy cases utilizing the same = = J J J J 4 , 4 , s s d d 0 0 and = K K 0 where = = J J Proof: We denote the spin distribution in figure 1(a) as j, while that in figure 1(b) as j. The most important difference between the two systems is the interlayer exchange coupling constant, J d for the frustrated FM system and = -J J d d for the frustrated AFM system. Other parameters are the same, i.e. = J J , s s = K K.

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Section: Introductionmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 99%

General nature of the step-induced frustration at ferromagnetic/antiferromagnetic interfaces: topological origin and quantitative understanding

Chen

Sun

et al. 2019

New J. Phys.

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“…This is also confirmed by XPS measurements as for t Ni = 2 nm we still see a weak metallic contribution from Ni after oxidation with 220 s. Since PMA increases for the entire range of oxidation times (up to 220 s), the thickness reduction of the Ni layer cannot be the only source of induced PMA. It is known that the AF layer [24][25][26]53,54 supports PMA through the EB coupling between the FM and AF layers. Therefore, the formation of NiO, clearly www.nature.com/scientificreports/ detected with XPS, brings an additional surface contribution to the PMA, which was postulated in our recent results.…”

Section: Resultsmentioning

confidence: 99%

Magnetic patterning of Co/Ni layered systems by plasma oxidation

Anastaziak

Andrzejewska

Schmidt

et al. 2022

Sci Rep

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We studied the structural, chemical, and magnetic properties of Ti/Au/Co/Ni layered systems subjected to plasma oxidation. The process results in the formation of NiO at the expense of metallic Ni, as clearly evidenced by X-ray photoelectron spectroscopy, while not affecting the surface roughness and grain size of the Co/Ni bilayers. Since the decrease of the thickness of the Ni layer and the formation of NiO increase the perpendicular magnetic anisotropy, oxidation may be locally applied for magnetic patterning. Using this approach, we created 2D heterostructures characterized by different combinations of magnetic properties in areas modified by plasma oxidation and in the regions protected from oxidation. As plasma oxidation is an easy to use, low cost, and commonly utilized technique in industrial applications, it may constitute an improvement over other magnetic patterning methods.

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“…T he phenomenon of perpendicular magnetization of ferromagnetic (FM) thin films induced by neighboring antiferromagnetic (AFM) layers has attracted considerable research interest in the field of magnetism because of its applicability to perpendicular magnetization-based magneto-logical devices [1][2][3][4] and the physics associated with the fundamental magnetic interactions in heteromagnetic systems. [5][6][7][8][9] Because the critical properties of perpendicular magnetic layers, such as the corresponding coercivity (H c ) and the magnitude of perpendicular magnetization, can be controlled by varying the relative thickness of FM and AFM thin films, 5,10) there is now a much more flexible means to control the perpendicular magnetic anisotropy (PMA) of magnetic thin films in magnetic devices desired for the modern magnetic recording industry. 3,11,12) According to previous investigations, PMA induced in AFM/FM thin films is governed by exchange interactions between magnetic moments occurring at the AFM-FM interface, as well as those occurring within the AFM layer.…”

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confidence: 99%

“…3,11,12) According to previous investigations, PMA induced in AFM/FM thin films is governed by exchange interactions between magnetic moments occurring at the AFM-FM interface, as well as those occurring within the AFM layer. 5,6,8,9,13,14) However, when the thickness or the size of an AFM film is reduced, its magnetic ordering temperature (T Ordering ) or Néel temperature (T N ), the temperature above which an antiferromagnet material become paramagnet, can also be reduced due to finite-size effects. 15) Consequently, the reduced T Ordering would limit the potential application of antiferromagnet-induced PMA in high-density magnetic devices.…”

mentioning

confidence: 99%

Promoting control of antiferromagnet-induced perpendicular magnetic anisotropy in magnetic multilayers: Effects of applying in-plane magnetic supporting layers

Wang

Huang

Tsai

et al. 2019

Appl. Phys. Express

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We report that antiferromagnet-induced perpendicular magnetic anisotropy (PMA) occurring in magnetic thin films can be effectively controlled by applying ultrathin in-plane magnetic supporting layers with high ferromagnetic ordering temperature through magnetic proximity effects. In a series of epitaxially grown 12-ML Ni/Co/Mn/Co/Cu(001) films, we observed that the PMA of the top 12-ML Ni/Co films and the long-range antiferromagnetic ordering of Mn film were enhanced concurrently with the establishment of ferromagnetic ordering of the bottom Co film. This clearly proves the underlying mechanism of magnetic proximity effects, and offers another degree of freedom for the control of perpendicular-based magnetic logical devices.

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Crucial role of interlayer distance for antiferromagnet-induced perpendicular magnetic anisotropy

Cited by 16 publications

References 47 publications

General nature of the step-induced frustration at ferromagnetic/antiferromagnetic interfaces: topological origin and quantitative understanding

General nature of the step-induced frustration at ferromagnetic/antiferromagnetic interfaces: topological origin and quantitative understanding

Magnetic patterning of Co/Ni layered systems by plasma oxidation

Promoting control of antiferromagnet-induced perpendicular magnetic anisotropy in magnetic multilayers: Effects of applying in-plane magnetic supporting layers

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